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Our well-equipped facilities and exceptional top quality handle throughout all stages of production enables us to guarantee total client fulfillment for optoelectronic,aln wafer,aln substrate,aluminum nitride substrate,Aluminum Nitride Wafer, We warmly welcome customers, business associations and friends from all over the world to contact us and seek cooperation for mutual benefits.
optoelectronic, Adhering to the principle of "Enterprising and Truth-Seeking, Preciseness and Unity", with technology as the core, our company continues to innovate, dedicated to providing you with the highest cost-effective products and meticulous after-sales service. We firmly believe that: we are outstanding as we are specialized.

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  • Barrel Susceptor with SiC Coating

    Barrel Susceptor with SiC Coating

    Semicorex Barrel Susceptor with SiC Coating is a cutting-edge solution designed to elevate the efficiency and precision of silicon epitaxial processes. Crafted with meticulous attention to detail, this Barrel Susceptor with SiC Coating is tailored to meet the demanding requirements of semiconductor manufacturing, serving as the optimal wafer holder and facilitating the seamless transfer of heat to wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Baffle Wafer Boat

    Baffle Wafer Boat

    Semicorex Baffle Wafer Boat is a highly advanced piece of equipment used in semiconductor processing. It has been meticulously designed to ensure the delicate wafers are kept safe during the critical stages of production. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Solid SiC Shower Head

    Solid SiC Shower Head

    The Solid SiC Shower Head is a crucial component in semiconductor manufacturing, specifically designed for chemical vapor deposition (CVD) processes. Semicorex, a leader in advanced materials technology, offers Solid SiC Shower Heads that ensure superior distribution of precursor gases over substrate surfaces. This precision is vital for achieving high-quality and consistent processing results.**
  • LPE Part

    LPE Part

    Semicorex LPE Part is a SiC-coated component specifically designed for the SiC epitaxy process, offering exceptional thermal stability and chemical resistance to ensure efficient operation in high-temperature and harsh environments. By choosing Semicorex products, you benefit from high-precision, long-lasting custom solutions that optimize the SiC epitaxy growth process and enhance production efficiency.*
  • 4

    4" 6" High Purity Semi-Insulating SiC Ingot

    Semicorex provides high purity semi-insulating SiC ingot with 4 inches and 6 inches. We have been manufacturer and supplier of wafers for many years. Our 4" 6" High Purity Semi-Insulating SiC Ingot has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Susceptor with Grid

    Susceptor with Grid

    Semicorex Susceptor with Grid is a specialized component used in the epitaxial growth process of semiconductor wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • Oxidation Process

    The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

  • The Fusion of AI and Physics: CVD Technological Innovation Behind the Nobel Prize

    The recent announcement of the 2024 Nobel Prize in Physics has brought unprecedented attention to the field of artificial intelligence.

  • About Semiconductor Heating Elements

    Heat treatment is one of the essential and important processes in the semiconductor process. Thermal process is the process of applying thermal energy to a wafer by placing it in an environment filled with a specific gas, including oxidation/diffusion/annealing, etc.

  • Method of GaN Crystal Growth

    When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • Introducing Silicon Material

    Silicon is the second most abundant element on Earth after oxygen. Most silicon is found in soil, rocks, natural water, trees, and plants.

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