Aluminum Nitride Substrates

Definitions of Semicorex Aluminum Nitride Substrates point to silicon-based aluminum nitride templates. As the era of 5G unfolds, high-frequency applications are gaining momentum rapidly. Expansion and development of 5G networks push demands for more and more frequency bands along with higher operating frequencies. The wave has on its part proportionally raised requirements in both quantity and quality of RF filters. To enable the high-performance RF filter manufacturing industry is an essential requirement for piezoelectric substrate materials having proven high quality.

Ultra-wide bandgap semiconductor Aluminum Nitride Substrates is a material of immense application potential, due to many outstanding properties, as a potential material for advanced use in electronics and optoelectronics. The bandgap of up to 6.2 eV demonstrates the strength requirement for high field breakdown, high saturation electron drift velocity, chemical, and thermal stability. as well as superior thermal conductivity and radiation resistance. These characteristics make AlN an indispensable material in high-performance electronic devices, particularly in 5G communication technologies.

Compared to traditional piezoelectric materials such as zinc oxide (ZnO), lead zirconate titanate (PZT), and lithium tantalate/lithium niobate (LT/LN), Aluminum Nitride Substrates exhibit exceptional properties that make them highly suitable for 5G RF filters. These properties include high electrical resistivity, excellent thermal conductivity, superior stability, and an ultra-fast acoustic wave propagation speed. Specifically, the longitudinal wave velocity of AlN reaches approximately 11,000 m/s, while the transverse wave velocity is around 6,000 m/s. These characteristics position AlN as one of the most ideal piezoelectric materials for high-performance surface acoustic wave (SAW), bulk acoustic wave (BAW), and film bulk acoustic resonator (FBAR) RF filters.

The Aluminum Nitride Substrates are primarily designed for the piezoelectric material market in 5G RF front-end filters. The quality and key parameters of this product have been rigorously tested and verified by authoritative third-party institutions and wafer-level processing evaluations. These assessments have confirmed that the product meets and even exceeds international standards. Furthermore, the technology required for large-scale manufacturing has already been established, ensuring stable mass production and supply to meet market demands.

The deployment of 5G networks necessitates the use of highly efficient and reliable RF filters to handle the increasing number of frequency bands. AlN substrates play a critical role in the fabrication of SAW, BAW, and FBAR filters, which are essential components in RF front-end modules. These filters enable precise frequency selection, signal amplification, and interference reduction, ensuring smooth and high-speed data transmission in 5G communication devices such as smartphones, base stations, and IoT applications.

Moreover, Aluminum Nitride Substrates are not limited to RF filters alone. They also have promising applications in power electronics, high-frequency transistors, optoelectronic devices, and satellite communications. Their ability to withstand high voltages and operate in extreme conditions makes them an attractive choice for next-generation electronic components.