Monocrystalline silicon planar target

Monocrystalline silicon planar target is usually processed by high-precision cutting equipment from monocrystalline silicon ingots fabricated by the Czochralski method. To meet the diversification of customer needs, monocrystalline silicon planar target can be cut into desired shapes for your esteemed customers. The precise grinding and polishing processing technology ensures the superb surface flatness of the target material, providing a strong guarantee for the deposition of thin films.

Monocrystalline silicon planar target is placed inside in a vacuum reaction chamber together with the substrate to be coated during the film deposition process. When the monocrystalline silicon planar target is bombarded by high-energy ions, silicon atoms on its surface are sputtered off. These sputtered silicon atoms then migrate and deposit onto the surface of the substrate, eventually forming a silicon thin film.

Monocrystalline silicon planar target serves as the material source for thin-film deposition. All silicon atoms deposited onto the wafer surface originate from monocrystalline silicon planar targets. Therefore, the quality of the monocrystalline silicon planar target directly determines the purity, uniformity and other key properties of the deposited thin film.

The superb purity characteristic endows monocrystalline silicon planar target with the ability to prevent impurities from contaminating the thin film. This significantly improves the electrical performance of semiconductor devices. The improvement of the thin films’ uniformity and adhesion benefits from its highly ordered crystal structure, which enables the sputtering particles to migrate and deposit on the wafer surface more regularly. The planar structure design is suitable for large-area and high-speed sputtering requirements, and is applicable to large-scale production scenarios such as semiconductor wafers and display panels.