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We know that we only thrive if we can guarantee our combined rate competiveness and good quality advantageous at the same time for high temperature seal,graphite foil price,graphite foil sheet,flexible graphite,graphite foil uses, Many years of work experience, we have realized the importance of providing good quality products and the best before-sales and after-sales services.
high temperature seal, All of our solutions comply with international quality standards and are greatly appreciated in a variety of markets around the world. If you are interested in any of our products or would like to discuss a custom order, be sure to feel free to contact us. We've been looking forward to forming successful business relationships with new clients in the near future.

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    High-purity Graphite Powder

    Semicorex High-purity graphite powder is a critical material in the semiconductor industry, particularly in the crystal growth process, where it plays a vital role in enabling high-quality, efficient, and precise production. Semicorex delivers high-purity graphite powder with unparalleled quality and precision, tailored to meet the stringent demands of the semiconductor industry.*
  • Insulation Covers

    Insulation Covers

    Semicorex Insulation Covers are critical thermal management component designed for optimal performance in LPE furnaces, utilizing high-strength rigid felt material to ensure consistent epitaxial growth conditions. Choose Semicorex for our proven expertise in delivering precision-engineered, high-purity furnace components that enhance process stability, yield, and equipment longevity.*
  • High-Temperature SiC Coating for Plasma Etch Chambers

    High-Temperature SiC Coating for Plasma Etch Chambers

    When it comes to wafer handling processes such as epitaxy and MOCVD, Semicorex's High-Temperature SiC Coating for Plasma Etch Chambers is the top choice. Our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance thanks to our fine SiC crystal coating.
  • CFC Rod

    CFC Rod

    Semicorex CFC Rod is specially designed for use in load-bearing applications, such as shafts in high-temperature vacuum furnaces and specialized atmosphere ovens.
  • SiC MOCVD Inner Segment

    SiC MOCVD Inner Segment

    Semicorex SiC MOCVD Inner Segment is an essential consumable for metal-organic chemical vapor deposition (MOCVD) systems used in the production of silicon carbide (SiC) epitaxial wafers. It's precisely designed to withstand the demanding conditions of SiC epitaxy, ensuring optimal process performance and high-quality SiC epilayers.**
  • Graphite Heater

    Graphite Heater

    Semicorex Graphite Heater is an advanced heating component made from high-purity isostatic graphite, designed for use in monocrystalline silicon (Si) crystal growth applications. As an essential part of semiconductor manufacturing, this product provides precise, uniform heating necessary for high-quality Si crystal production. Through its specialized design and high-performance material, it ensures optimal conditions for crystal growth, significantly enhancing the efficiency and consistency of the process.*
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  • How to Manufacture Graphite Rods?

    Compression molding, isostatic pressing, and rod extrusion are the three most common methods for producing graphite rods, similar to those used for creating graphite tubes.

  • How to do CMP Process

    In the process of silicon wafer manufacturing, after the crystal rod is cut into silicon wafers, it will need to be polished and cleaned to obtain a single crystal silicon wafer like a mirror.

  • Carbon/carbon composite molding process

    Carbon/carbon composite materials refer to composite materials composed of carbon fiber reinforcement and carbon-based matrix. They have the characteristics of low density, high strength, high specific modulus, low thermal expansion coefficient, etc. Their super high temperature resistance makes them the most promising high-temperature material.

  • Silicon Carbide(SiC) Crystal Growth Furnace

    Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

  • What is porous graphite?

    Porous graphite, also known as porous carbon or porous graphite material, is a graphite form that has been specially engineered to have an interconnected network of pores or voids within its structure.

  • Various applications of quartz in semiconductor manufacturing

    At first glance, quartz (SiO2) material looks very similar to glass, but what is special is that ordinary glass is composed of many components (such as quartz sand, borax, boric acid, barite, barium carbonate, limestone, feldspar, soda ash, etc.), while quartz only contains SiO2, and its microstructure is a simple network composed of silicon dioxide tetrahedral structural units.

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