English
Home > Products > High Purity Graphite Susceptor

China High Purity Graphite Susceptor Manufacturers, Suppliers, Factory

"Control the standard by the details, show the toughness by quality". Our firm has strived to establish a highly efficient and stable workers workforce and explored an effective high-quality management system for High Purity Graphite Susceptor,Etch Carrier(ICP/PSS),Carbide-Coated Plasma Sputtering Target Holder,Silicon Carbide PECVD Tray,Etching Carrier holder, We warmly welcome all intrigued customers to speak to us for additional information and facts.
High Purity Graphite Susceptor, We've got been perfectly devoted to the design, R&D, manufacture, sale and service of hair products during 10 years of development. We now have introduced and are making full use of internationally advanced technology and equipment, with advantages of skilled workers. "Dedicated to providing reliable customer service" is our aim. We've been sincerely looking forward to establishing business relationships with friends from at home and abroad.

Related Products

Hot Products

  • Quartz Crucible in Semiconductor

    Quartz Crucible in Semiconductor

    Semicorex cutting-edge Quartz Crucible in Semiconductor, the epitome of precision and reliability for semiconductor processing. Crafted from semiconductor-grade quartz, this crucible is engineered to meet the demanding requirements of the semiconductor industry, ensuring optimal performance and efficiency in every application. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Inductively Heated Barrel Epi System

    Inductively Heated Barrel Epi System

    If you need a graphite susceptor with exceptional thermal conductivity and heat distribution properties, look no further than the Semicorex Inductively Heated Barrel Epi System. Its high-purity SiC coating provides superior protection in high-temperature and corrosive environments, making it the ideal choice for use in semiconductor manufacturing applications.
  • Gas Distribution Plates

    Gas Distribution Plates

    Semicorex Gas Distribution Plates, made of CVD SiC is a critical component in plasma etching systems, designed to ensure uniform gas dispersion and consistent plasma performance across the wafer. Semicorex is the trusted choice for high-performance ceramic solutions, offering unmatched material purity, engineering precision, and dependable support tailored to the demands of advanced semiconductor manufacturing.*
  • PAN based Carbon Fiber

    PAN based Carbon Fiber

    Semicorex PAN Based Carbon Fiber Graphite Soft Felt is a lightweight, high-performance insulation material designed for use in high-temperature environments. Choose Semicorex for our commitment to delivering innovative, reliable, and tailored solutions that enhance efficiency and precision in critical applications.*
  • Vertical Wafer Boat

    Vertical Wafer Boat

    Semicorex Vertical Wafer Boat represents a crucial component within semiconductor processing, designed to securely house and transport delicate silicon wafers throughout various stages of fabrication. Crafted from Silicon Carbide (SiC), a robust and thermally stable material renowned for its exceptional properties in harsh environments, these boats ensure the integrity and safety of wafers during processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • High-Temperature SiC Coating for Plasma Etch Chambers

    High-Temperature SiC Coating for Plasma Etch Chambers

    When it comes to wafer handling processes such as epitaxy and MOCVD, Semicorex's High-Temperature SiC Coating for Plasma Etch Chambers is the top choice. Our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance thanks to our fine SiC crystal coating.
  • Related Blog
  • Reviews

  • SiC Boats vs. Quartz Boats: Current Usage and Future Trends in Semiconductor Manufacturing

    This article delves into the usage and future trajectory of silicon carbide (SiC) boats in relation to quartz boats within the semiconductor industry, specifically focusing on their applications in solar cell manufacturing.

  • Silicon Carbide(SiC) Crystal Growth Furnace

    Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

  • Doping Control in Sublimation SiC Growth

    Silicon carbide (SiC) plays an important role in manufacturing power electronics and high-frequency devices due to its excellent electrical and thermal properties. The quality and doping level of SiC crystals directly affect the performance of the device, so precise control of doping is one of the key technologies in the SiC growth process.

  • Method of GaN Crystal Growth

    When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

  • Differences between SiC crystals with different structures

    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept