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  • SiC Coated Wafer Heater

    SiC Coated Wafer Heater

    Semicorex is a leading independently owned manufacturer of Silicon Carbide Coated Graphite, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our SiC Coated Wafer Heater has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Sealing Part

    SiC Sealing Part

    Semicorex SiC Sealing Part offers a blend of exceptional hardness, chemical resistance, and thermal stability, making it significant for demanding industrial applications. The advanced characteristics of SiC Sealing Part ensure durability, reliability, and efficiency, thereby enhancing the performance and longevity of the components.**
  • Carbon Fiber Rigid Felt

    Carbon Fiber Rigid Felt

    Semicorex Carbon Fiber Rigid Felt is a high-performance material designed for use in high-temperature environments, particularly in semiconductor crystal growth processes, where it serves as crucial components like crucibles and insulation linings. Semicorex offers advanced, high-quality materials with superior thermal stability, dimensional accuracy, and durability, ensuring optimal performance and efficiency in semiconductor manufacturing.*
  • Silicon Carbide Composite Membrane

    Silicon Carbide Composite Membrane

    Semicorex Silicon Carbide Composite Membrane is an advanced filtration solution, combining the superior properties of silicon carbide, alumina, and calcium oxide to deliver high-performance filtration across a wide range of industries. Semicorex is the trusted choice for this cutting-edge technology, offering unmatched quality, reliability, and tailored solutions that ensure optimal efficiency and long-term performance for your filtration needs.*
  • Susceptor with Grid

    Susceptor with Grid

    Semicorex Susceptor with Grid is a specialized component used in the epitaxial growth process of semiconductor wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Gas Distribution Plates

    Gas Distribution Plates

    Semicorex Gas Distribution Plates, made of CVD SiC is a critical component in plasma etching systems, designed to ensure uniform gas dispersion and consistent plasma performance across the wafer. Semicorex is the trusted choice for high-performance ceramic solutions, offering unmatched material purity, engineering precision, and dependable support tailored to the demands of advanced semiconductor manufacturing.*
  • Related Blog
  • Reviews

  • What is Thermal Annealing

    The annealing process, also known as Thermal Annealing, is a crucial step in semiconductor manufacturing.

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • Homoepitaxy and Heteroepitaxy Explained Simply

    Homoepitaxy and heteroepitaxy play pivotal roles in material science. Homoepitaxy involves the growth of a crystalline layer on a substrate of the same material, ensuring minimal defects due to perfect lattice matching. In contrast, heteroepitaxy grows a crystalline layer on a different material substrate, which can lead to challenges like lattice mismatch. These processes are crucial in advancing semiconductor devices and thin films. For instance, heteroepitaxy significantly impacts microelectronics and quantum optics, contributing to innovations like Light Emitting Diodes.

  • GaN vs SiC

    There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

  • Czochralski method

    Wafers are sliced from crystal rods, which are produced from polycrystalline and pure undoped intrinsic materials. The process of transforming polycrystalline material into single crystals through melting and recrystallization is known as crystal growth. Currently, two main methods are employed for this process: the Czochralski method and the zone melting method. Among these, the Czochralski method (often referred to as the CZ method) is the most significant for growing single crystals from melts. In fact, over 85% of single crystal silicon is produced using the Czochralski method.

  • Silicon Carbide(SiC) Crystal Growth Furnace

    Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

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