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graphite company, We have customers from more than 20 countries and our reputation has been recognized by our esteemed customers. Never-ending improvement and striving for 0% deficiency are our two main quality policies. Should you need anything, don't hesitate to contact us.

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    4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafer substrates for many years. Our 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Tantalum Carbide Coated Graphite Susceptor

    Tantalum Carbide Coated Graphite Susceptor

    Semicorex provides Tantalum Carbide Coated Graphite Susceptor with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coating Ring

    TaC Coating Ring

    Semicorex TaC Coating Ring stands as a pivotal component in the realm of monocrystal growth within the thermal field. Crafted with precision and innovation, this specialized guide ring plays a crucial role in the intricate process of monocrystalline material production. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coating Upper Halfmoon

    TaC Coating Upper Halfmoon

    Semicorex TaC Coating Upper Halfmoon is a specialized component engineered for high-performance epitaxial processes in semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Wafer Carriers with SiC Coating

    Wafer Carriers with SiC Coating

    The Semicorex Wafer Carriers with SiC Coating, an integral part of the epitaxial growth system, is distinguished by its exceptional purity, resistance to extreme temperatures, and robust sealing properties, serving as tray that is essential for the support and heating of semiconductor wafers during the critical phase of epitaxial layer deposition, thereby optimizing the overall performance of the MOCVD process. We at Semicorex are dedicated to manufacturing and supplying high-performance Wafer Carriers with SiC Coating that fuse quality with cost-efficiency.
  • SiC Pump Shaft

    SiC Pump Shaft

    Semicorex SiC Pump Shaft stands out for its unparalleled performance and reliability as an integral component in magnetic pumps, shield pumps, multistage pumps, hydraulic pumps, chemical pumps, and centrifuges.
  • Related Blog
  • Reviews

  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • What is liquid phase epitaxy?

    The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

  • Quartz products in semiconductor applications

    In the semiconductor industry, quartz is widely used, and high-purity quartz products are even more important consumables in wafer production. The production of silicon single crystal crucibles, crystal boats, diffusion furnace core tubes, and other quartz components must use high-purity quartz glass products.

  • Applications of Gallium Oxide Wafer

    Gallium oxide (Ga2O3) has emerged as a promising material for various applications, particularly in power devices and radio frequency (RF) devices. In this article, we explore the key opportunities and target markets for gallium oxide in these domains.

  • Plasma Processes in CVD Operations

    Chemical Vapor Deposition (CVD) refers to a process technology where multiple gaseous reactants at varied partial pressures undergo a chemical reaction under specific temperature and pressure conditions. The resulting solid substance deposits on the surface of the substrate material, thereby obtaining the desired thin film. In traditional integrated circuit manufacturing processes, the obtained thin film materials are generally compounds such as oxides, nitrides, carbides, or materials like polycrystalline silicon, amorphous silicon, etc.

  • Oxidation Process

    The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

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