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We believe that extensive time period partnership can be a result of top quality, price added support, loaded encounter and personal contact for Epitaxy In Vlsi,LED Chips,LED Light Emitting Diode,Carrier Wafer,Epi Wafer Process, Accurate process devices, Advanced Injection Molding Equipment, Equipment assembly line, labs and software advancement are our distinguishing feature.
Epitaxy In Vlsi, As operation principle is "be market-oriented , good faith as principle, win-win as objective", holding on "customer first, quality assurance, service first" as our purpose, dedicated to offer the original quality, create excellence service , we won the praise and trust in the industry of auto parts. In the future, We are going to give quality product and excellent service in return to our customers , welcome any suggestions and feedback from all over the world.

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    The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

  • SiGe and Si Selective Etching Technology

    A critical step in the fabrication of n-type GAAFETs involves the high-selectivity etching of SiGe:Si stacks prior to the deposition of inner spacers, generating silicon nanosheets and releasing channels.

  • What Is Silicon Carbide (SiC)?

    Semiconductor materials can be divided into three generations according to the time sequence. The first generation of germanium, silicon and other common monomaterials, which is characterised by convenient switching, generally used in integrated circuits. The second generation of gallium arsenide, indium phosphide and other compound semiconductors, mainly used for light-emitting and communication materials.

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  • Semiconductor doping process

    One of the unique properties of semiconductor materials is that their conductivity, as well as their conductivity type (N-type or P-type), can be created and controlled through a process called doping. This involves introducing specialized impurities, known as dopants, into the material to form junctions on the surface of the wafer. The industry employs two main doping techniques: thermal diffusion and ion implantation.

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