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  • Ring Set

    Ring Set

    Unlock the full potential of your semiconductor epitaxial processes with Semicorex Ring Set – a crucial component crafted from SiC-coated graphite. Designed to elevate the efficiency and reliability of your epitaxial growth, this small yet powerful accessory plays a key role in ensuring optimal performance within semiconductor manufacturing environments.
  • SiC Guide Ring

    SiC Guide Ring

    Semicorex SiC Guide Ring is engineered to optimize the single crystal growth process. Its exceptional thermal conductivity ensures uniform heat distribution, contributing to the formation of high-quality crystals with enhanced purity and structural integrity. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • Tantalum Carbide Coating Halfmoon Part

    Tantalum Carbide Coating Halfmoon Part

    Semicorex Tantalum Carbide Coating Halfmoon Part is a highly specialized component designed for use in the epitaxial deposition process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Multi Pocket Susceptor

    SiC Multi Pocket Susceptor

    Semicorex SiC Multi Pocket Susceptor represents a critical enabling technology in the epitaxial growth of high-quality semiconductor wafers. Fabricated through a sophisticated Chemical Vapor Deposition (CVD) process, these susceptors provide a robust and high-performance platform for achieving exceptional epitaxial layer uniformity and process efficiency.**
  • LPE Part

    LPE Part

    Semicorex LPE Part is a SiC-coated component specifically designed for the SiC epitaxy process, offering exceptional thermal stability and chemical resistance to ensure efficient operation in high-temperature and harsh environments. By choosing Semicorex products, you benefit from high-precision, long-lasting custom solutions that optimize the SiC epitaxy growth process and enhance production efficiency.*
  • SiC Coated Plate

    SiC Coated Plate

    Semicorex SiC Coated Plate is a precision-engineered component made from graphite with a high-purity silicon carbide coating, designed for demanding epitaxial applications. Choose Semicorex for its industry-leading CVD coating technology, strict quality control, and proven reliability in semiconductor manufacturing environments.*
  • Related Blog
  • Reviews

  • LPE Apparatus

    In the realm of semiconductor device fabrication, the precise control of crystal growth is paramount for achieving high-quality and reliable devices. One technique that has played a pivotal role in this domain is Liquid-Phase Epitaxy (LPE).

  • Introducing core technology of graphite boat

    Graphite Boat, stands at the forefront of technological innovation in its industry, featuring a suite of groundbreaking advancements designed to enhance performance, purity, and lifespan. Below, we delve into the core technologies that define graphite boat's excellence:

  • Silicon Carbide Industry

    The silicon carbide industry involves a chain of processes that include substrate creation, epitaxial growth, device design, device manufacturing, packaging, and testing. In general, silicon carbide is created as ingots, which are then sliced, ground, and polished to produce a silicon carbide substrate.

  • Application and Development Challenges of TaC Coated Graphite Components

    The third-generation wide bandgap semiconductor materials, such as Gallium Nitride (GaN) and Silicon Carbide (SiC), are renowned for their exceptional optoelectronic conversion and microwave signal transmission capabilities. These materials meet the demanding requirements of high-frequency, high-temperature, high-power, and radiation-resistant electronic devices. Therefore, they have vast application prospects in new-generation mobile communications, new energy vehicles, smart grids, and LED technologies. The comprehensive development of the third-generation semiconductor industry urgently requires breakthroughs in key core technologies, continual advancement in device design and innovation, and a resolution to import dependencies.

  • Silicon Carbide Substrate Core Process Flow

    Silicon carbide substrate is a compound semiconductor single crystal material composed of two elements, carbon and silicon. It has the characteristics of large bandgap, high thermal conductivity, high critical breakdown field strength, and high electron saturation drift rate.

  • High-Purity CVD Thick SiC: Process Insights for Material Growth

    Thick, high-purity silicon carbide (SiC) layers, typically exceeding 1mm, are critical components in various high-value applications, including semiconductor fabrication and aerospace technologies. This article delves into the Chemical Vapor Deposition (CVD) process for producing such layers, highlighting key process parameters, material characteristics, and emerging applications.

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