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We rely upon strategic thinking, constant modernisation in all segments, technological advances and of course upon our employees that directly participate inside our success for CMC,C/SiC,C/C-SiC,Carbon Ceramic Brake Discs,Carbon Ceramic Brake, Trust us, you might discover a far better solution on car parts industry.
CMC, With good quality, reasonable price and sincere service, we enjoy a good reputation. Products are exported to South America, Australia, Southeast Asia and so on. Warmly welcome customers at home and abroad to cooperate with us for the brilliant future.

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  • SiC Coated Graphite Base Susceptors for MOCVD

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    Semicorex SiC Coated Graphite Base Susceptors for MOCVD are superior quality carriers used in the semiconductor industry. Our product is designed with high-quality silicon carbide that provide excellent performance and long-lasting durability. This carrier is ideal for use in the process of growing an epitaxial layer on the wafer chip.
  • SiC Coated Plate Carriers for MOCVD

    SiC Coated Plate Carriers for MOCVD

    Semicorex SiC Coated Plate Carriers for MOCVD is a high-quality carrier designed for use in the semiconductor manufacturing process. Its high purity, excellent corrosion resistance, and even thermal profile make it an excellent choice for those looking for a carrier that can withstand the demands of the semiconductor manufacturing process.
  • Satellite Plate

    Satellite Plate

    Semicorex Satellite Plate is a critical component used in semiconductor epitaxy reactors, specifically designed for Aixtron G5+ equipment. Semicorex combines advanced material expertise with cutting-edge coating technology to deliver reliable, high-performance solutions tailored for demanding industrial applications.*
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    Semicorex SiC Lid is a high-purity silicon carbide component engineered for extreme semiconductor processing environments. Choosing Semicorex means ensuring unmatched material quality, precision engineering, and custom solutions trusted by leading semiconductor manufacturers worldwide.*
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    Silicon Carbide (SiC) epitaxy is a key technology in the field of semiconductors, particularly for the development of high-power electronic devices. SiC is a compound semiconductor with a wide bandgap, which makes it ideal for applications that require a high-temperature and high-voltage operation.

  • MOCVD is the key equipment

  • Introducing Gallium Oxide(Ga2O3)

    Gallium oxide (Ga2O3) as an "ultra-wide bandgap semiconductor" material has garnered sustained attention. Ultra-wide bandgap semiconductors fall under the category of "fourth-generation semiconductors," and in comparison to third-generation semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), gallium oxide boasts a bandgap width of 4.9eV, surpassing silicon carbide's 3.2eV and gallium nitride's 3.39eV. A wider bandgap implies that electrons require more energy to transition from the valence band to the conduction band, endowing gallium oxide with characteristics like high voltage resistance, high-temperature tolerance, high power capability, and radiation resistance.

  • What are the challenges of silicon carbide substrate production?

    Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

  • The Critical Role of SiC Substrates and Crystal Growth in the Semiconductor Industry

    Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

  • Thin film growth process

    Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

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