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That has a positive and progressive attitude to customer's fascination, our enterprise constantly improves our merchandise high quality to meet the demands of customers and further focuses on safety, reliability, environmental requirements, and innovation of Chemical Mechanical Polishing Edge Ring,Sic Edge Rings For Wafer Etching Process,Silicon Carbide Edge Ring,Semiconductor Edge Ring,Plasma Edge Ring, Through our hard work, we have always been on the forefront of clean technology product innovation. We are a green partner you can rely on. Contact us today for more information!
Chemical Mechanical Polishing Edge Ring, Based on our automatic production line, steady material purchase channel and quick subcontract systems have been built in mainland China to meet customer's wider and higher requirement in recent years. We have been looking forward to cooperating with more clients worldwide for common development and mutual benefit!Your trust and approval are the best reward for our efforts. Keeping honest, innovative and efficient, we sincerely expect that we can be business partners to create our brilliant future!

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  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • What are the challenges of silicon carbide substrate production?

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