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Using a complete scientific high quality management program, superior high quality and superior faith, we acquire great reputation and occupied this industry for Ceramic Fiber Board,zirconia fiber,zirconia board,Zirconia Ceramic Fiber Insulation Board,Zirconia Ceramic Rod, 1st business enterprise, we find out each other. Even further business enterprise, the trust is getting there. Our enterprise always at your services at any time.
Ceramic Fiber Board, Our company will continue to serve customers with best quality, competitive price and timely delivery & the best payment term! We sincerely welcome friends from all over the world to visit& cooperate with us and enlarge our business. If you are interested in our items, make sure you do not hesitate to contact us, we'll be happy to provide you with further information!

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    Semicorex's SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber is a highly reliable solution for semiconductor manufacturing processes, featuring superior heat distribution and thermal conductivity properties. It is also highly resistant to corrosion, oxidation, and high temperatures.
  • SiC Coated Barrel Susceptor for Wafer Epitaxial

    SiC Coated Barrel Susceptor for Wafer Epitaxial

    The Semicorex SiC Coated Barrel Susceptor for Wafer Epitaxial is the perfect choice for single crystal growth applications, thanks to its exceptionally flat surface and high-quality SiC coating. Its high melting point, oxidation resistance, and corrosion resistance make it an ideal choice for use in high-temperature and corrosive environments.
  • SiC Susceptor for MOCVD

    SiC Susceptor for MOCVD

    Semicorex is a leading manufacturer and supplier of SiC Susceptor for MOCVD. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
  • TaC Coated Porous Graphite

    TaC Coated Porous Graphite

    Semicorex TaC Coated Porous graphite, is an advanced high-purity material on semiconductor processing. This crucial piece of equipment plays a pivotal role in the process of single crystal SiC growth. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coated Graphite Susceptor

    TaC Coated Graphite Susceptor

    Semicorex cutting-edge TaC Coated Graphite Susceptor, a revolutionary component designed to elevate your wafer epitaxial process to new heights of efficiency and precision. Crafted with unparalleled expertise and utilizing state-of-the-art technology, Semicorex TaC Coated Graphite Susceptor is engineered to meet the exacting demands of semiconductor manufacturing.
  • SiC Coating Ring

    SiC Coating Ring

    Semicorex SiC Coating Ring is a critical component in the demanding environment of semiconductor epitaxy processes. With our steadfast commitment to providing top-quality products at competitive prices, we are ready to become your long-term partner in China.*
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  • China remained the largest semiconductor equipment market

    Worldwide sales of semiconductor manufacturing equipment increased 5 percent from $102.6 billion in 2021 to an all-time record of $107.6 billion last year, SEMI, the industry association representing the global electronics design and manufacturing supply chain.

  • Funds on Semiconductor projects

    Every country is aware of the importance of chips and is now accelerating the construction of its own chip manufacturing supply chain ecosystem to prevent another chip shortage problem. But the advanced foundries without next-gen chip designers would be the same as “Fabs without Chips”.

  • Taiwan's PSMC to Build 300mm Wafer Fab in Japan

    Taiwan's Power Semiconductor Manufacturing Corporation (PSMC) has announced plans to build a 300mm wafer fab in Japan in collaboration with SBI Holdings. The purpose of this collaboration is to strengthen Japan's domestic IC (integrated circuit) supply chain, with a particular focus on circuits for AI edge computing and packaging technologies.

  • About defects in SiC crystals - Micropipe

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

  • What is porous graphite?

    Porous graphite, also known as porous carbon or porous graphite material, is a graphite form that has been specially engineered to have an interconnected network of pores or voids within its structure.

  • Why Choose Pressureless Sintering for SiC Ceramic Preparation?

    The ultra-high synthesis temperature and the difficulty of achieving dense sintering of SiC ceramics have limited their development. The sintering process is crucial for SiC ceramics.

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