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cavity soi wafer, Besides strong technical strength, we also introduce advanced equipment for inspection and conduct strict management. All the staff of our company welcome friends both at home and abroad to come for visits and business on the basis of equality and mutual benefit. If you are interested in any of our objects, remember to feel free to contact us for quotation and product details.

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    Taiwan's Power Semiconductor Manufacturing Corporation (PSMC) has announced plans to build a 300mm wafer fab in Japan in collaboration with SBI Holdings. The purpose of this collaboration is to strengthen Japan's domestic IC (integrated circuit) supply chain, with a particular focus on circuits for AI edge computing and packaging technologies.

  • Dry Etching vs Wet Etching

    In semiconductor fabrication, etching is one of the major steps, along with photolithography and thin-film deposition. It involves removing unwanted materials from the surface of a wafer using chemical or physical methods. This step is carried out after coating, photolithography, and developing. It is used to remove the exposed thin film material, leaving only the desired portion of the wafer, and then removing the excess photoresist. These steps are repeated numerous times to create complex integrated circuits.

  • What is porous graphite?

    Porous graphite, also known as porous carbon or porous graphite material, is a graphite form that has been specially engineered to have an interconnected network of pores or voids within its structure.

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    The crystal growth furnace is the core equipment for the growth of Silicon Carbide crystals. It is similar to the traditional crystalline silicon-grade crystal growth furnace. The furnace structure is not very complicated. It is mainly composed of the furnace body, heating system, coil transmission mechanism, vacuum acquisition and measurement system, gas path system, cooling system, control system, etc. The thermal field and process conditions determine the key indicators such as the quality, size, and conductivity of the SiC crystal.

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