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Getting buyer gratification is our company's purpose endlessly. We will make good attempts to produce new and top-quality products, meet up with your specific requirements and provide you with pre-sale, on-sale and after-sale expert services for Carbon fiber-reinforced carbon,CFRC,C/C Composite,carbon-carbon composite,Carbon Fiber Composites, We never stop improving our technique and high quality to maintain up with the enhancement trend of this industry and fulfill your pleasure effectively. For anyone who is fascinated within our solutions, you should get in touch with us freely.
Carbon fiber-reinforced carbon, Our company insists on the principle of "Quality First, Sustainable Development", and takes "Honest Business, Mutual Benefits" as our developable goal. All members sincerely thank all old and new customers' support. We'll keep working hard and offering you the highest-quality goods and service.

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  • SiC ICP plate

    SiC ICP plate

    Semicorex SiC ICP plate is an advanced semiconductor component specifically engineered to meet the rigorous demands of modern semiconductor manufacturing processes. This high-performance product is designed with the latest silicon carbide (SiC) material technology, offering unparalleled durability, efficiency, and reliability, making it an essential component in the fabrication of cutting-edge semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • SiC Bearing

    SiC Bearing

    Semicorex SiC Bearing with its exceptional hardness, strength, and chemical inertness, has emerged as a cornerstone material for engineering demanding applications across diverse industries. When crafted into bearings, SiC unlocks a new level of performance and reliability, particularly in environments characterized by extreme temperatures, corrosive substances, and stringent purity requirements. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Bearing that fuses quality with cost-efficiency.**
  • 6 Inch Semi-Insulating HPSI SiC Wafer

    6 Inch Semi-Insulating HPSI SiC Wafer

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of silicon carbide products for many years. Our double-polished 6 Inch Semi-Insulating HPSI SiC Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • ICP Etching Wafer Holder

    ICP Etching Wafer Holder

    Semicorex's ICP etching wafer holder is the perfect solution for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers ensure even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • Ga2O3 Substrate

    Ga2O3 Substrate

    Unlock the potential of cutting-edge semiconductor applications with our Ga2O3 Substrate, a revolutionary material at the forefront of semiconductor innovation. Ga2O3, a fourth-generation wide-bandgap semiconductor, exhibits unparalleled characteristics that redefine power device performance and reliability.
  • Wafer Boat

    Wafer Boat

    Semicorex Wafer Boat is a critical component in the semiconductor manufacturing process, specifically designed for use in the diffusion process, where it plays a vital role in the creation of highly integrated circuits. With our steadfast commitment to providing top-quality products at competitive prices, we are ready to become your long-term partner in China.*
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  • Silicon Carbide Heating Elements

    In the world of high-temperature heating, achieving precision and reliability in extreme conditions is paramount. To meet these challenges, innovative materials and designs have been developed to push the boundaries of what's possible. One such advancement is the Silicon Carbide (SiC) coated graphite heating element.

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

  • Can you grind silicon carbide?

    Silicon carbide (SiC) has important applications in areas such as power electronics, high-frequency RF devices, and sensors for high-temperature-resistant environments due to its excellent physicochemical properties. However, the slicing operation during SiC wafer processing introduces damages on the surface, which, if left untreated, can expand during the subsequent epitaxial growth process and form epitaxial defects, thus affecting the yield of the device.

  • SiC Ceramics: The Indispensable Material for High-Precision Components in Semiconductor Manufacturing

    Semiconductor manufacturing, the cornerstone of modern technological advancement, is in constant pursuit of smaller, faster, and more efficient integrated circuits. This relentless pursuit drives the need for increasingly precise and sophisticated manufacturing processes, where each step relies heavily on high-performance, high-quality, and high-precision equipment. Silicon carbide (SiC), a high-performance structural ceramic material, plays a crucial role in this demanding environment.

  • Synthesizing High-Purity Silicon Carbide Powder

    High-Purity Silicon Carbide Powder features exceptional wide bandgap characteristics, which make it an ideal material for manufacturing high-frequency, high-power electronic devices.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

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