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    The Semicorex SiC Wafer Susceptors for MOCVD are a paragon of precision and innovation, specifically crafted to facilitate the epitaxial deposition of semiconductor materials onto wafers. The plates’ superior material properties enable them to withstand the stringent conditions of epitaxial growth, including high temperatures and corrosive environments, making them indispensable for high-precision semiconductor manufacturing. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Wafer Susceptors for MOCVD that fuse quality with cost-efficiency.
  • Teflon Cassettes

    Teflon Cassettes

    Semicorex Teflon Cassettes are high-purity PTFE wafer carriers designed for safe, contamination-free processing in corrosive chemical environments. Choose Semicorex for industry-leading precision, reliable quality, and customizable solutions backed by expertise in semiconductor handling systems.*
  • Isostatic Graphite Crucible

    Isostatic Graphite Crucible

    Semicorex Isostatic Graphite Crucible is a specialized vessel used in the thermal processing of semiconductor materials, particularly in the production of monocrystals. It plays a crucial role in the controlled growth of single-crystal structures essential for semiconductor device fabrication. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Ceramic Membrane

    SiC Ceramic Membrane

    Semicorex SiC ceramic membrane is an ideal solution for industries requiring efficient, durable, and precise filtration. Choosing Semicorex means partnering with a trusted expert committed to providing high-quality ceramic membrane technology, innovative solutions, and excellent customer support.*
  • Si Epitaxy

    Si Epitaxy

    Si epitaxy is a crucial technique in the semiconductor industry, as it enables the production of high-quality silicon films with tailored properties for various electronic and optoelectronic devices. . Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • 6 Inch N-type SiC Wafer

    6 Inch N-type SiC Wafer

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafers for many years. Our double-polished 6 Inch N-type SiC Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
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  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • Why does quartz need to be annealed

    According to processing method, use, and appearance, quartz glass is classified into two categories: transparent and opaque. The transparent category includes types such as fused transparent quartz glass, fused quartz glass, gas-refined transparent quartz glass, and synthetic quartz glass.

  • Homoepitaxy and Heteroepitaxy Explained Simply

    Homoepitaxy and heteroepitaxy play pivotal roles in material science. Homoepitaxy involves the growth of a crystalline layer on a substrate of the same material, ensuring minimal defects due to perfect lattice matching. In contrast, heteroepitaxy grows a crystalline layer on a different material substrate, which can lead to challenges like lattice mismatch. These processes are crucial in advancing semiconductor devices and thin films. For instance, heteroepitaxy significantly impacts microelectronics and quantum optics, contributing to innovations like Light Emitting Diodes.

  • Oxidation Process

    The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

  • Semiconductor ceramic parts

    Semiconductor ceramic parts belong to advanced ceramics and are an indispensable part of the semiconductor manufacturing process. The raw materials for preparation are usually high-purity, ultra-fine inorganic materials, such as aluminum oxide, silicon carbide, aluminum nitride, silicon nitride, yttrium oxide, zirconium oxide, etc.

  • Can you grind silicon carbide?

    Silicon carbide (SiC) has important applications in areas such as power electronics, high-frequency RF devices, and sensors for high-temperature-resistant environments due to its excellent physicochemical properties. However, the slicing operation during SiC wafer processing introduces damages on the surface, which, if left untreated, can expand during the subsequent epitaxial growth process and form epitaxial defects, thus affecting the yield of the device.

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