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Fast and fantastic quotations, informed advisers to help you choose the correct products that suits all your needs, a short manufacturing time, responsible good quality control and distinct companies for paying and shipping affairs for Bluegreen LED,Semiconductor Manufacturing Process,Wafer Processing,Silicon Carbide (SiC),GaN Epi Wafer, Currently, we're seeking ahead to even bigger cooperation with abroad customers according to mutual gains. Please experience free of charge to get in touch with us for more specifics.
Bluegreen LED, We are sincerely looking forward to cooperate with customers all over the world. We believe we can satisfy you with our high-quality goods and perfect service . We also warmly welcome customers to visit our company and purchase our solutions.

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    Semicorex SiC Susceptor for ICP Etch is manufactured with a focus on maintaining high standards of quality and consistency. The robust manufacturing processes used to create these susceptors ensure that each batch meets stringent performance criteria, delivering reliable and consistent results in semiconductor etching. Additionally, Semicorex is equipped to offer fast delivery schedules, which is crucial for keeping pace with the rapid turnaround demands of the semiconductor industry, ensuring that production timelines are met without compromising on quality.We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Susceptor for ICP Etch that fuse quality with cost-efficiency.**
  • SiC Diffusion Furnace Tube

    SiC Diffusion Furnace Tube

    The advanced material properties of Semicorex SiC Diffusion Furnace Tube, including high flexural strength, outstanding oxidation and corrosion resistance, high wear resistance, low friction coefficient, superior high-temperature mechanical properties, and ultra-high purity, make it indispensable in the semiconductor industry, particularly for diffusion furnace applications. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Diffusion Furnace Tube that fuse quality with cost-efficiency.**
  • Cassette Handles

    Cassette Handles

    Semicorex Cassette handles made of PFA and PTFE ensure the safe and efficient movement of wafer cassettes in semiconductor processing. Choose Semicorex for high-performance, durable handles that offer superior chemical resistance and thermal stability, ensuring optimal wafer protection and manufacturing efficiency.*
  • AlN Ceramic Crucible

    AlN Ceramic Crucible

    Designed to withstand extreme conditions, the AlN Ceramic Crucible presented by Semicorex is an indispensable tool for professionals working with non-ferrous metals and semiconductor materials like gallium arsenide.
  • Vacuum Chuck

    Vacuum Chuck

    Semicorex Vacuum Chuck is a high-performance component designed for secure and precise wafer handling in semiconductor manufacturing. Choose Semicorex for our advanced, durable, and contamination-resistant solutions that ensure optimal performance in even the most demanding processes.*
  • SiC Vacuum Chucks

    SiC Vacuum Chucks

    Semicorex SiC Vacuum Chucks are high-performance ceramic fixture designed for secure wafer adsorption in semiconductor manufacturing. With superior thermal, mechanical, and chemical properties, it ensures stability and precision in demanding process environments.*
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  • About defects in SiC crystals - Micropipe

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

  • Dislocation in SiC crystals

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

  • What is quartz?

    Quartz (SiO₂) material is very similar to glass at first glance, but the special thing is that the general glass is made up of many components (such as quartz sand, borax, boric acid, barite, barium carbonate, limestone, feldspar, soda ash, etc.), while the quartz contains only SiO₂ components, and the microstructure of its silicon dioxide tetrahedral structural units composed of a simple network.

  • Silicon Epitaxial Layers and Substrates in Semiconductor Manufacturing

    In modern electronics, optoelectronics, microelectronics, and information technology fields, semiconductor substrates and epitaxial technologies are indispensable. They provide a solid foundation for manufacturing high-performance, high-reliability semiconductor devices. As technology continues to advance, semiconductor substrates and epitaxial technologies will also progress, bringing new breakthroughs and developments to the future of the semiconductor industry.

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

  • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

    Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

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