English
Home > Products > alumina oxide ceramic

China alumina oxide ceramic Manufacturers, Suppliers, Factory

Our pursuit and company goal is to "Always satisfy our customer requirements". We continue to develop and design superior quality products for both our old and new customers and achieve a win-win prospect for our clients as well as us for alumina oxide ceramic,alumina boat crucible,alumina combustion boat,ion implant,Alumina ceramic, Never-ending improvement and striving for 0% deficiency are our two main good quality policies. Should you need anything, do not hesitate to call us.
alumina oxide ceramic, Our company abides by the management idea of "keep innovation, pursue excellence". On the basis of assuring the advantages of existing solutions, we continuously strengthen and extend product development. Our company insists on innovation to promote the sustainable development of enterprise, and make us become the domestic high-quality suppliers.

Related Products

Hot Products

  • SiC Multi Pocket Susceptor

    SiC Multi Pocket Susceptor

    Semicorex SiC Multi Pocket Susceptor represents a critical enabling technology in the epitaxial growth of high-quality semiconductor wafers. Fabricated through a sophisticated Chemical Vapor Deposition (CVD) process, these susceptors provide a robust and high-performance platform for achieving exceptional epitaxial layer uniformity and process efficiency.**
  • Electrostatic Chuck ESC

    Electrostatic Chuck ESC

    Semicorex Electrostatic Chuck ESC is a highly specialized tool designed to enhance precision and efficiency in semiconductor manufacturing processes. Our E-Chucks have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.*
  • Alumina Fastener

    Alumina Fastener

    Semicorex Alumina Fastener is integral to the construction of equipment used in chemical vapor deposition (CVD), ion implantation, photolithography, and semiconductor manufacturing.
  • SiC End Effector

    SiC End Effector

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC End Effector has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • MOCVD 3x2’’ Susceptor

    MOCVD 3x2’’ Susceptor

    Semicorex MOCVD 3x2’’ Susceptor developed by Semicorex represents a pinnacle of innovation and engineering excellence, specifically tailored to meet the intricate demands of contemporary semiconductor manufacturing processes.**
  • LNOI Wafer

    LNOI Wafer

    Semicorex LNOI Wafer: High-performance Lithium Niobate on Insulator wafers with customizable substrates for advanced photonics and RF applications. With precision engineering, customizable options, and superior material quality, Semicorex ensures high-performance LNOI wafers tailored to your application needs.*
  • Related Blog
  • Reviews

  • What is a TaC coating on graphite?

    In the rapidly evolving field of semiconductor manufacturing, even the smallest improvements can make a big difference when it comes to achieving optimal performance, durability, and efficiency. One advancement that is generating a lot of buzz in the industry is the use of TaC (Tantalum Carbide) coating on graphite surfaces. But what exactly is TaC coating, and why are semiconductor manufacturers taking notice of it?

  • Different types of SiC ceramics

    Silicon carbide (SiC) ceramic is a type of advanced ceramic material known for its exceptional properties and wide range of applications. It is composed of silicon (Si) and carbon (C) atoms arranged in a crystal lattice structure, resulting in a hard and strong material with excellent thermal and electrical conductivity.

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • Substantial growth of the SiC coated graphite susceptor market

  • Annealing Processes in Modern Semiconductor Manufacturing

    As technology nodes continue to shrink, the formation of ultra-shallow junctions presents significant challenges. Thermal annealing processes including Rapid thermal annealing (RTA) and flash lamp annealing (FLA) are vital techniques that maintain high impurity activation rates while minimizing diffusion, ensuring optimal device performance.

  • 4th Generation Semiconductors Gallium Oxide/β-Ga2O3

    The first generation of semiconductor materials is mainly represented by silicon (Si) and germanium (Ge), which began to rise in the 1950s. Germanium was dominant in the early days and was mainly used in low-voltage, low-frequency, medium-power transistors and photodetectors, but due to its poor high temperature resistance and radiation resistance, it was gradually replaced by silicon devices in the late 1960s. Silicon is still the main semiconductor material in the field of microelectronics due to its high technological maturity and cost advantages.

Related Search

alumina oxide ceramic;ceramic flange;alumina al2o3;flange;white alumina;alumina ceramic material;alumina machining;alumina aluminium oxide;high purity alumina;alumina material;

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept