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  • Silicon Etch Plate for PSS Etching Applications

    Silicon Etch Plate for PSS Etching Applications

    Semicorex's Silicon Etch Plate for PSS Etching Applications is a high-quality, ultra-pure graphite carrier that is specifically designed for epitaxial growth and wafer handling processes. Our carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The silicon etch plate for PSS etching applications has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
  • Etching Ring

    Etching Ring

    The Etching Ring made of CVD SiC is an essential component in the semiconductor manufacturing process, offering exceptional performance in plasma etching environments. With its superior hardness, chemical resistance, thermal stability, and high purity, CVD SiC ensures that the etching process is precise, efficient, and reliable. By choosing Semicorex CVD SiC Etching Rings, semiconductor manufacturers can enhance the longevity of their equipment, reduce downtime, and improve the overall quality of their products.*
  • SiC Coated Barrel Susceptor for Epitaxial Growth

    SiC Coated Barrel Susceptor for Epitaxial Growth

    With its superior density and thermal conductivity, the Semicorex SiC Coated Barrel Susceptor for Epitaxial Growth is the ideal choice for use in high-temperature and corrosive environments. Coated with high-purity SiC, this graphite product provides excellent protection and heat distribution, ensuring reliable and consistent performance in semiconductor manufacturing applications.
  • PBN Heater

    PBN Heater

    Semicorex PBN Heater offers ultra-clean, high-temperature performance ideal for semiconductor, crystal growth, and vacuum applications. Choose Semicorex for unmatched material purity, engineering precision, and reliable delivery trusted by leading global manufacturers.*
  • ICP Etching Plate

    ICP Etching Plate

    Semicorex ICP Etching Plate is an advanced, high-performance component specifically designed for semiconductor applications, crafted from Silicon Carbide (SiC) material. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • MOCVD Satellite Holder Plate

    MOCVD Satellite Holder Plate

    Semicorex MOCVD Satellite Holder Plate is an outstanding carrier designed for use in the semiconductor industry. Its high purity, excellent corrosion resistance, and even thermal profile make it an excellent choice for those looking for a carrier that can withstand the demands of the semiconductor manufacturing process. We are committed to providing our customers with high-quality products that meet their specific requirements. Contact us today to learn more about our MOCVD Satellite Holder Plate and how we can help you with your semiconductor manufacturing needs.
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  • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

    Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

  • Silicon Epitaxial Layers and Substrates in Semiconductor Manufacturing

    In modern electronics, optoelectronics, microelectronics, and information technology fields, semiconductor substrates and epitaxial technologies are indispensable. They provide a solid foundation for manufacturing high-performance, high-reliability semiconductor devices. As technology continues to advance, semiconductor substrates and epitaxial technologies will also progress, bringing new breakthroughs and developments to the future of the semiconductor industry.

  • Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

    In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

  • Understanding the Etching Differences Between Silicon and Silicon Carbide Wafers

    Etching Process: Silicon vs. Silicon Carbide

  • What is Thermal Field?

    In the field of single crystal growth, the temperature distribution within the crystal growth furnace plays a critical role. This temperature distribution, commonly referred to as the thermal field, is a vital factor that influences the quality and characteristics of the crystal being grown. The thermal field can be categorized into two types: static and dynamic.

  • The Fusion of AI and Physics: CVD Technological Innovation Behind the Nobel Prize

    The recent announcement of the 2024 Nobel Prize in Physics has brought unprecedented attention to the field of artificial intelligence.

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