China ald deposition Manufacturers, Suppliers, Factory

In semiconductor manufacturing, atomic-level flatness is usually used to describe the global flatness of the wafer, with the unit of nanometers (nm).

Semiconductor materials can be divided into three generations according to the time sequence. The first generation of germanium, silicon and other common monomaterials, which is characterised by convenient switching, generally used in integrated circuits. The second generation of gallium arsenide, indium phosphide and other compound semiconductors, mainly used for light-emitting and communication materials.

In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

Porous graphite, also known as porous carbon or porous graphite material, is a graphite form that has been specially engineered to have an interconnected network of pores or voids within its structure.

Compression molding, isostatic pressing, and rod extrusion are the three most common methods for producing graphite rods, similar to those used for creating graphite tubes.

Wafer dicing is the final step in the semiconductor manufacturing process, separating silicon wafers into individual chips (also called dies). Plasma dicing uses a dry etching process to etch away the material in the dicing streets through fluorine plasma to achieve the separation effect. With the advancement of semiconductor technology, the market is increasingly demanding smaller, thinner, and more complex chips. Plasma dicing is gradually replacing traditional diamond blades and laser solutions because it can improve yield, production capacity, and design flexibility, becoming the first choice of the semiconductor industry.