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  • What is Semiconductor Ion Implantation Technology?

    In semiconductor manufacturing, ion implantation involves using high-energy accelerators to inject specific impurity atoms, such as arsenic or boron, into a silicon substrate.

  • Synthesis method of high-purity Silicon Carbide (SiC) powder

    At present, the synthesis methods of high-purity SiC powder for growing single crystals mainly include: CVD method and improved self-propagating synthesis method (also known as high-temperature synthesis method or combustion method).

  • What is the Chemical Vapor Deposition？

    Chemical vapor deposition (CVD) is a coating technology that uses gaseous or vaporous substances to undergo chemical reactions in the gas phase or at a gas-solid interface to generate solid substances that are deposited on the substrate surface, thereby forming high-performance solid films. The core of CVD is to transport gaseous precursors into a reaction chamber, where chemical reactions generate solid products that are deposited on the substrate, and by-product gases are exhausted from the system.

  • Purification Technology of Graphite in SiC semiconductor

    Graphite is vital in producing Silicon Carbide (SiC) semiconductors, known for their exceptional thermal and electrical properties. This makes SiC ideal for high-power, high-temperature, and high-frequency applications. In SiC semiconductor manufacturing, graphite is commonly used for crucibles, heaters, and other high-temperature processing components due to its excellent thermal conductivity, chemical stability, and resistance to thermal shock.

  • What is the difference between arsenic doping and phosphorus doping in single crystal Silicon

    Both are N-type semiconductors, but what's the difference between arsenic and phosphorus doping in single-crystal silicon? In single-crystal silicon, arsenic (As) and phosphorus (P) are both commonly used N-type dopants (pentavalent elements that provide free electrons). However, due to differences in atomic structure, physical properties, and processing characteristics, their doping effects and application scenarios differ significantly.

  • The Crucial Role of Epitaxial Layers in Semiconductor Devices

    Epitaxial growth refers to the process of growing a crystallographically well-ordered monocrystalline layer on a substrate. Generally speaking, epitaxial growth involves the cultivation of a crystal layer on a single-crystal substrate, with the grown layer sharing the same crystallographic orientation as the original substrate. Epitaxy is extensively utilized in semiconductor manufacturing, such as the production of epitaxial silicon wafers in the integrated circuit industry.

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