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  • SiC Coated Epitaxial Reactor Barrel

    SiC Coated Epitaxial Reactor Barrel

    The Semicorex SiC Coated Epitaxial Reactor Barrel is a top-quality graphite product coated with high-purity SiC. Its excellent density and thermal conductivity make it an ideal choice for use in LPE processes, providing exceptional heat distribution and protection in corrosive and high-temperature environments.
  • Susceptors for MOCVD Reactors

    Susceptors for MOCVD Reactors

    Semicorex's Susceptors for MOCVD Reactors are high-quality products used in the semiconductor industry for various applications such as silicon carbide layers and epitaxy semiconductor. Our product is available in gear or ring shape and is designed to achieve high-temperature oxidation resistance, making it stable at temperatures up to 1600°C.
  • SiC Coating Graphite Substrate Wafer Carriers for MOCVD

    SiC Coating Graphite Substrate Wafer Carriers for MOCVD

    You can rest assured to buy SiC Coating Graphite Substrate Wafer Carriers for MOCVD from our factory. At Semicorex, we are a large-scale manufacturer and supplier of SiC Coated Graphite Susceptor in China. Our product has a good price advantage and covers many of the European and American markets. We strive to provide our customers with high-quality products that meet their specific requirements. Our SiC Coating Graphite Substrate Wafer Carrier for MOCVD is an excellent choice for those looking for a high-performance carrier for their semiconductor manufacturing process.
  • Epi-SiC Susceptor

    Epi-SiC Susceptor

    Semicorex Epi-SiC Susceptor, a component engineered with meticulous attention to detail, is indispensable for cutting-edge semiconductor fabrication, especially in epitaxial applications. The Epi-SiC Susceptor’s design, which embodies precision and innovation, supports the epitaxial deposition of semiconductor materials on wafers, ensuring exceptional efficiency and dependability in performance. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • SiC Guide Ring

    SiC Guide Ring

    Semicorex SiC Guide Ring is engineered to optimize the single crystal growth process. Its exceptional thermal conductivity ensures uniform heat distribution, contributing to the formation of high-quality crystals with enhanced purity and structural integrity. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • MOCVD Susceptors

    MOCVD Susceptors

    Semicorex’s MOCVD Susceptors epitomize the pinnacle of craftsmanship, endurance, and reliability for intricate graphite epitaxy and precise wafer handling tasks. These susceptors are renowned for their high density, exceptional flatness, and superior thermal control, making them the premier choice for demanding manufacturing environments. We at Semicorex are dedicated to manufacturing and supplying high-performance MOCVD Susceptors that fuse quality with cost-efficiency.
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  • Reviews

  • SiC Epitaxy

    There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's performance.

  • LPE Apparatus

    In the realm of semiconductor device fabrication, the precise control of crystal growth is paramount for achieving high-quality and reliable devices. One technique that has played a pivotal role in this domain is Liquid-Phase Epitaxy (LPE).

  • Substrate Cutting and Grinding Process

    SiC substrate material is the core of SiC chip. The production process of the substrate is: after obtaining the SiC crystal ingot through single crystal growth; then preparing the SiC substrate requires smoothing, rounding, cutting, grinding (thinning); mechanical polishing, chemical mechanical polishing; and cleaning, testing, etc. Process

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

  • Understanding the Etching Differences Between Silicon and Silicon Carbide Wafers

    Etching Process: Silicon vs. Silicon Carbide

  • Why Is There Increasing Demand for High-Thermal Conductivity SiC Ceramics in the Semiconductor Industry?

    Currently, silicon carbide (SiC) is a highly active area of research in thermal conductive ceramic materials both domestically and internationally.

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