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Our solutions are broadly acknowledged and dependable by users and may meet consistently developing economic and social requires for MOCVD Chamber Lids,MOCVD Ceiling Plate,MOCVD Cover Plate,Silicon Carbide Ceramic Lid,Graphite Ceiling, Thanks for taking your useful time to go to us and look ahead to have a nice cooperation with you.
MOCVD Chamber Lids, We insist on "Quality First, Reputation First and Customer First". We are committed to providing high-quality items and good after-sales services. Up to now, our solutions have been exported to more than 60 countries and areas around the world, such as America, Australia and Europe. We enjoy a high reputation at home and abroad. Always persisting in the principle of "Credit, Customer and Quality", we expect cooperation with people in all walks of life for mutual benefits.

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    ICP Plasma Etching System for PSS Process

    Choose Semicorex's ICP Plasma Etching System for PSS Process for high-quality epitaxy and MOCVD processes. Our product is engineered specifically for these processes, offering superior heat and corrosion resistance. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • MOCVD Cover Star Disc Plate for Wafer Epitaxy

    MOCVD Cover Star Disc Plate for Wafer Epitaxy

    Semicorex is a renowned manufacturer and supplier of high-quality MOCVD Cover Star Disc Plate for Wafer Epitaxy. Our product is specially designed to cater to the needs of the semiconductor industry, particularly in growing the epitaxial layer on the wafer chip. Our susceptor is used as the center plate in MOCVD, with a gear or ring-shaped design. The product is highly resistant to high heat and corrosion, making it ideal for use in extreme environments.
  • Susceptor with Grid

    Susceptor with Grid

    Semicorex Susceptor with Grid is a specialized component used in the epitaxial growth process of semiconductor wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Wafer Carriers with SiC Coating

    Wafer Carriers with SiC Coating

    The Semicorex Wafer Carriers with SiC Coating, an integral part of the epitaxial growth system, is distinguished by its exceptional purity, resistance to extreme temperatures, and robust sealing properties, serving as tray that is essential for the support and heating of semiconductor wafers during the critical phase of epitaxial layer deposition, thereby optimizing the overall performance of the MOCVD process. We at Semicorex are dedicated to manufacturing and supplying high-performance Wafer Carriers with SiC Coating that fuse quality with cost-efficiency.
  • SiC MOCVD Inner Segment

    SiC MOCVD Inner Segment

    Semicorex SiC MOCVD Inner Segment is an essential consumable for metal-organic chemical vapor deposition (MOCVD) systems used in the production of silicon carbide (SiC) epitaxial wafers. It's precisely designed to withstand the demanding conditions of SiC epitaxy, ensuring optimal process performance and high-quality SiC epilayers.**
  • Alumina Ceramic Arm

    Alumina Ceramic Arm

    Semicorex Alumina Ceramic Arm is a high-purity robotic component designed for precise and contamination-free wafer handling in semiconductor manufacturing. Choosing Semicorex ensures not only advanced alumina ceramic material quality but also precision craftsmanship that guarantees durability, cleanliness, and reliability in critical process environments.*
  • Related Blog
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  • What is a MOCVD system?

  • Why choose SiC-coated graphite susceptors?

    Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

  • Thermal field insulation material

    The process of monocrystalline silicon growth predominantly occurs within a thermal field, where the quality of the thermal environment significantly impacts crystal quality and growth efficiency. The design of the thermal field plays a pivotal role in shaping temperature gradients and gas flow dynamics within the furnace chamber. Furthermore, the materials used in constructing the thermal field directly influence its lifespan and performance.

  • Main steps in SiC substrate processing

    The processing of 4H-SiC substrate mainly includes the following steps:

  • SiC Coated Susceptors in MOCVD Processes

    CVD SiC coated susceptors function as specialized wafer holders in Metal-Organic Chemical Vapor Deposition (MOCVD) processes, playing a crucial role in semiconductor fabrication. These components are vital for maintaining the structural integrity of wafers during epitaxy under extreme conditions, such as high temperatures and corrosive environments. **

  • SK Siltron Expands Its SiC Wafer Production with a $544 Million Loan from the U.S. Department of Energy

    The U.S. Department of Energy (DOE) recently confirmed a $544 million loan to SK Siltron, a semiconductor wafer manufacturer under SK Group.

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