China MOCVD Chamber Lids Manufacturers, Suppliers, Factory

If you're looking for a high-quality graphite susceptor coated with high-purity SiC, the Semicorex Barrel Susceptor with SiC Coating in Semiconductor is the perfect choice. Its exceptional thermal conductivity and heat distribution properties make it ideal for use in semiconductor manufacturing applications.

Semicorex SiC Coated Barrel Susceptor for LPE Epitaxial Growth is a high-performance product designed to provide consistent and reliable performance over an extended period. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for the growth of high-quality epitaxial layers on wafer chips. Its customizability and cost-effectiveness make it a highly competitive product in the market.

The Single-crystal Silicon Epi Susceptor is an essential component designed for Si-GaN epitaxy processes, which can be tailored to individualized specifications and preferences, providing a bespoke solution that aligns perfectly with specific requirements. Whether it entails modifications in dimensions or adjustments in coating thickness, we possess the capability to design and deliver a product that accommodates diverse process parameters, thereby optimizing performance for targeted applications. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.

Semicorex CVD TaC Coating Ring is a high-performance component designed for demanding applications requiring exceptional wear resistance, thermal stability, and chemical inertness. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.

Semicorex ALD Planetary Susceptor is important in ALD equipment due to their ability to withstand harsh processing conditions, ensuring high-quality film deposition for a variety of applications. As the demand for advanced semiconductor devices with smaller dimensions and enhanced performance continues to grow, the use of the ALD Planetary Susceptor in ALD is expected to expand further.**

SiC-coated graphite MOCVD susceptors are the essential components used in Metal-organic chemical vapor deposition (MOCVD) equipment, which are responsible for holding and heating wafer substrates. With their superior thermal management, chemical resistance, and dimensional stability, SiC-coated graphite MOCVD susceptors are regarded as the optimal option for high-quality wafer substrate epitaxy. In the wafer fabrication, the MOCVD technology is used to construct epitaxial layers on the surface of wafer substrates, preparing for the fabrication of advanced semiconductor devices. Since the growth of epitaxial layers is affected by multiple factors, the wafer substrates cannot be directly placed in the MOCVD equipment for deposition. SiC-coated graphite MOCVD susceptors are required to hold and heat the wafer substrates, creating stable thermal conditions for the growth of epitaxial layers. Therefore, the performance of SiC-coated graphite MOCVD susceptors directly determines the uniformity and purity of thin film materials, which in turn affects the manufacturing of advanced semiconductor devices.