English
Home > Products > High Temperature Ceramic End Effector

China High Temperature Ceramic End Effector Manufacturers, Suppliers, Factory

We support our consumers with ideal high-quality goods and substantial level support. Becoming the specialist manufacturer in this sector, we now have acquired abundant practical encounter in producing and managing for High Temperature Ceramic End Effector,Mechanical Robot Arm,Sic Robot Finger,Ceramic Sintering Temperature,Silicon Carbide End Effector, Please truly feel absolutely free to call us at any time. We will reply you when we receive your inquiries. Please note that samples are available before we start our company.
High Temperature Ceramic End Effector, With its rich manufacturing experience, high-quality products, and perfect after-sale service, the company has gained good reputation and has become one of the famous enterprise specialized in manufacturing series.We sincerely hope to establish business relation with you and pursue mutual benefit.

Related Products

Hot Products

  • Barrel Susceptor Epi System

    Barrel Susceptor Epi System

    Semicorex Barrel Susceptor Epi System is a high-quality product that offers superior coating adhesion, high purity, and high-temperature oxidation resistance. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for the growth of epixial layers on wafer chips. Its cost-effectiveness and customizability make it a highly competitive product in the market.
  • Silicon Etch Plate for PSS Etching Applications

    Silicon Etch Plate for PSS Etching Applications

    Semicorex's Silicon Etch Plate for PSS Etching Applications is a high-quality, ultra-pure graphite carrier that is specifically designed for epitaxial growth and wafer handling processes. Our carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The silicon etch plate for PSS etching applications has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
  • Silicon Carbide Graphite Substrate MOCVD Susceptor

    Silicon Carbide Graphite Substrate MOCVD Susceptor

    Semicorex Silicon Carbide Graphite Substrate MOCVD Susceptor is the ultimate choice for semiconductor manufacturers looking for a high-quality carrier that can deliver superior performance and durability. Its advanced material ensures even thermal profile and laminar gas flow pattern, delivering high-quality wafers.
  • Electrostatic Chuck ESC

    Electrostatic Chuck ESC

    Semicorex Electrostatic Chuck ESC is a highly specialized tool designed to enhance precision and efficiency in semiconductor manufacturing processes. Our E-Chucks have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.*
  • Silicon Carbide Boats

    Silicon Carbide Boats

    Semicorex Silicon Carbide Boats are high-performance wafer carriers designed for semiconductor oxidation and diffusion processes. These precision-engineered components provide a stable, high-purity environment for silicon wafers inside furnace tubes, ensuring optimal process reliability and efficiency. *
  • PBN Composite Heaters

    PBN Composite Heaters

    Semicorex PBN Composite Heaters are advanced heating elements engineered for high-temperature, ultra-clean vacuum environments, widely used in semiconductor, optoelectronics, and material research industries. Choose Semicorex for industry-leading expertise, small-batch customization, and world-class quality in PBN heating solutions.*
  • Related Blog
  • Reviews

  • Dislocation in SiC crystals

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

  • Silicon Carbide Applications

    Silicon carbide has a large number of applications in emerging industries and traditional industries. At present, the global semiconductor market has exceeded 100 billion yuan. It is expected that by 2025, the global sales of semiconductor manufacturing materials will reach 39.5 billion US dollars, of which the silicon carbide semiconductor market is expected to reach a market size of 2.5 billion US dollars in 2025. At the same time, silicon carbide is still the material with the best application performance in traditional ceramics, refractory, high temperature, grinding and other fields.

  • Difficulty in preparing SiC substrates

    At present, the most important direction trend of substrate development is to expand the diameter. The 6-inch mass production line in the global SiC market is maturing, and leading companies have entered the 8-inch market.

  • What is Silicon Nitride

    Silicon nitride (Si3N4) is a key material in the development of advanced high-temperature structural ceramics.

  • What are the technical difficulties of SiC crystal growth furnace

    The crystal growth furnace is the core equipment for the growth of Silicon Carbide crystals. It is similar to the traditional crystalline silicon-grade crystal growth furnace. The furnace structure is not very complicated. It is mainly composed of the furnace body, heating system, coil transmission mechanism, vacuum acquisition and measurement system, gas path system, cooling system, control system, etc. The thermal field and process conditions determine the key indicators such as the quality, size, and conductivity of the SiC crystal.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept