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Our well-equipped facilities and excellent quality control throughout all stages of production enables us to guarantee total customer satisfaction for epi-wafer,12-inch wafer,SiC wafer,silicon carbide substrate,sic wafer, We have experienced manufacturing facilities with more than 100 employees. So we can guarantee short lead time and quality assurance.
epi-wafer, Our goods are produced with the best raw materials. Every moment, we constantly improve the production programme. In order to ensure better quality and service, we have been focusing on the production process. We have now got high praise by partner. We're looking forward to establishing business relationship with you.

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  • Barrel Susceptor Silicon Carbide Coated Graphite

    Barrel Susceptor Silicon Carbide Coated Graphite

    Semicorex Barrel Susceptor Silicon Carbide Coated Graphite is a specialized component designed for use in the epitaxy process, particularly in carrying wafers. Contact us today to learn more about how we can help you with your semiconductor wafer processing needs.
  • RTP RTA SiC Coated Carrier

    RTP RTA SiC Coated Carrier

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. Semicorex graphite susceptor engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our RTP RTA SiC Coated Carrier has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Glass-like Carbon Coating

    Glass-like Carbon Coating

    Semicorex Glass-like carbon coating is an advanced protective layer engineered for high-performance applications requiring exceptional hardness, thermal stability, and low particulate emission. Semicorex combines advanced material expertise with cutting-edge coating technology to deliver reliable, high-performance solutions tailored for demanding industrial applications.*
  • Wafer Carrier for MOCVD

    Wafer Carrier for MOCVD

    the Semicorex Wafer Carrier for MOCVD, Crafted for the precise needs of Metal Organic Chemical Vapor Deposition (MOCVD), emerges as an indispensable tool in the processing of single-crystal Si or SiC for high-scale integrated circuits. The Wafer Carrier for MOCVD composition boasts unparalleled purity, resistance to elevated temperatures and corrosive environments, and superior sealing properties to maintain a pristine atmosphere. We at Semicorex are dedicated to manufacturing and supplying high-performance Wafer Carriers for MOCVD that fuse quality with cost-efficiency.
  • Graphite Heater

    Graphite Heater

    Semicorex Graphite Heater is an advanced heating component made from high-purity isostatic graphite, designed for use in monocrystalline silicon (Si) crystal growth applications. As an essential part of semiconductor manufacturing, this product provides precise, uniform heating necessary for high-quality Si crystal production. Through its specialized design and high-performance material, it ensures optimal conditions for crystal growth, significantly enhancing the efficiency and consistency of the process.*
  • Rigid Felt Crucible

    Rigid Felt Crucible

    Semicorex Rigid Felt Crucible stands out as a premium choice for high-temperature applications in the semiconductor industry. Its combination of high compressive strength and excellent thermal insulation makes it a reliable and efficient component in crystal growth processes. By choosing Semicorex Rigid Felt Crucible, you invest in a product that not only enhances your manufacturing capabilities but also supports your commitment to quality and performance. *
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    At present, the most important direction trend of substrate development is to expand the diameter. The 6-inch mass production line in the global SiC market is maturing, and leading companies have entered the 8-inch market.

  • The Study on the Distribution of Electrical Resistivity in n-Type 4H-SiC Crystals

    4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.

  • What is graphitization degree?

    The degree of graphitization is an essential measure used to assess how close carbon atoms are to forming a tightly-packed hexagonal graphite crystal structure.

  • Core Material for SiC Growth: Tantalum Carbide Coating

    The current third-generation semiconductors are primarily based on Silicon Carbide, with substrates accounting for 47% of device costs, and epitaxy accounting for 23%, totaling approximately 70% and forming the most crucial part of the SiC device manufacturing industry.

  • A Review of 9 Sintering Techniques for Silicon Carbide Ceramics

    Silicon carbide (SiC), a prominent structural ceramic, is renowned for its exceptional properties, including high-temperature strength, hardness, elastic modulus, wear resistance, thermal conductivity, and corrosion resistance. These attributes make it suitable for a wide range of applications, from traditional industrial uses in high-temperature kiln furniture, burner nozzles, heat exchangers, sealing rings, and sliding bearings, to advanced applications like ballistic armor, space mirrors, semiconductor wafer chucks, and nuclear fuel cladding.

  • How to classify semiconductors

    There are six classifications for semiconductors, which are classified by product standard, processing signal type, manufacturing process, usage function, application field, and design method.

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