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TaC Coated Graphite Crucible

TaC Coated Graphite Crucible

Semicorex TaC Coated Graphite Crucible is made by the Tantalum Carbide coating graphite through the CVD method, which is the most suitable material applied in the semiconductor manufacturing process. Semicorex is a company that consistently specializes in CVD ceramic coating and offers the best material solutions in the semiconductor industry.*

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Mini-sized Graphite Crucibles

Mini-sized Graphite Crucibles

Semicorex mini-sized graphite crucibles are miniaturized graphite containers, which are specifically designed for melting precious metals such as gold in high-temperature environments. With excellent manufacturing technology, precise engineering design and thoughtfully customized services, Semicorex look forward to becoming your long-term partner.

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SiC-coated Graphite Crucibles

SiC-coated Graphite Crucibles

SiC-coated graphite crucibles are essential containers precision-machined from silicon carbide-coated graphite material, offering excellent high temperature resistance and chemical corrosion resistance. With their superior performance and reliable quality, Semicorex's SiC-coated graphite crucibles are the optimal solution for achieving controlled high-quality crystal production.

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Graphite Crucible

Graphite Crucible

Semicorex Graphite Crucible with excellent properties is great applied in the smelting industry. Semicorex supplies high-quality customized products according to customers’ needs.*

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Impregnated Graphite Crucible

Impregnated Graphite Crucible

Semicorex Impregnated Graphite Crucible is a good-quality and cost-efficient product for various applications, the material efficiently longer the lifespan than the ordinary graphite.Semicorex provides customized products to meet customers’ needs.*

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Graphite Crucibles

Graphite Crucibles

Semicorex graphite crucibles engineered for exceptional thermal stability and contamination control in semiconductor crystal growth processes. Choose our graphite crucibles for unmatched purity, performance, and reliability in semiconductor crystal growth. *

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