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Epitaxial Wafer Boat
  • Epitaxial Wafer BoatEpitaxial Wafer Boat
  • Epitaxial Wafer BoatEpitaxial Wafer Boat
  • Epitaxial Wafer BoatEpitaxial Wafer Boat
  • Epitaxial Wafer BoatEpitaxial Wafer Boat
  • Epitaxial Wafer BoatEpitaxial Wafer Boat

Epitaxial Wafer Boat

Semicorex provides wafer boats, pedestals, and custom wafer carriers for both vertical / column and horizontal configurations. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Epitaxial Wafer Boat has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

Semicorex Epitaxial Wafer Boat, the perfect solution for wafer processing in semiconductor manufacturing. Our Epitaxial Wafer Boats are made from high-quality silicon carbide (SiC) ceramic that provides superior resistance to high temperatures and chemical corrosion.
Our silicon carbide Epitaxial Wafer Boat has a smooth surface that minimizes particle generation, ensuring the highest level of purity for your products. With excellent thermal conductivity and superior mechanical strength, our boats provide consistent and reliable results.
Our Epitaxial Wafer Boats are compatible with all standard wafer processing equipment and can withstand temperatures up to 1600°C. They are easy to handle and clean, making them a cost-effective and efficient choice for your manufacturing needs.
Our team of experts is committed to providing the best quality and service. We offer custom designs to meet your specific requirements, and our products are backed by our quality assurance program.


Parameters of Epitaxial Wafer Boat

Technical Properties

Index

Unit

Value

Material Name

Reaction Sintered Silicon Carbide

Pressureless Sintered Silicon Carbide

Recrystallized Silicon Carbide

Composition

RBSiC

SSiC

R-SiC

Bulk Density

g/cm3

3

3.15 ± 0.03

2.60-2.70

Flexural Strength

MPa (kpsi)

338(49)

380(55)

80-90 (20°C) 90-100(1400°C)

Compressive Strength

MPa (kpsi)

1120(158)

3970(560)

> 600

Hardness

Knoop

2700

2800

/

Breaking Tenacity

MPa m1/2

4.5

4

/

Thermal Conductivity

W/m.k

95

120

23

Coefficient of Thermal Expansion

10-6.1/°C

5

4

4.7

Specific Heat

Joule/g 0k

0.8

0.67

/

Max temperature in air

1200

1500

1600

Elastic Modulus

Gpa

360

410

240


The difference between SSiC and RBSiC:

1. Sintering process is different. RBSiC is to infiltrate free Si into silicon carbide at a low temperature, SSiC is formed by natural shrinkage at 2100 degrees.

2. SSiC have smoother surface, higher density and higher strength, for some sealings with more strict surface requirements, SSiC will be better.

3. Different used time under different PH and temperature, SSiC is longer than RBSiC


Features of Silicon Carbide Epitaxial Wafer Boat

High purity SiC coated by MOCVD
Superior heat resistance & thermal uniformity
Fine SiC crystal coated for a smooth surface
High durability against chemical cleaning
Material is designed so that cracks and delamination do not occur.



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