6 Inch Semi-Insulating HPSI SiC Wafer

Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of silicon carbide products for many years. Our double-polished 6 Inch Semi-Insulating HPSI SiC Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

Semicorex has a complete silicon carbide(SiC) wafer products line, including 4H and 6H substrates with N-type, P-type and high purity semi-insulating wafers, they can be with or without epitaxy.

The 6 inch diameter of our 6 Inch Semi-Insulating HPSI SiC Wafer provides a large surface area for manufacturing power electronic devices such as MOSFETs, Schottky diodes, and other high-voltage applications. 6 Inch Semi-Insulating HPSI SiC Wafer is mainly used in 5G communications, radar systems, guidance heads, satellite communications, warplanes and other fields, with the advantages of enhancing the RF range, ultra-long-range identification, anti-jamming and high-speed, high-capacity information transfer applications, is considered the most ideal substrate for making microwave power devices.

Specifications:

● Diameter: 6″

●Double-polished

● Grade: Production, Research, Dummy

● 4H-SiC HPSI Wafer

● Thickness: 500±25 μm

● Micropipe Density: ≤1 ea/cm² ~ ≤15 ea/cm²

Items	Production	Research	Dummy
Crystal Parameters
Polytype	4H
Surface orientation on-axis	<0001 >
Surface orientation off-axis	0±0.2°
(0004)FWHM	≤45arcsec	≤60arcsec	≤1OOarcsec
Electrical Parameters
Type	HPSI
Resistivity	≥1 E8ohm·cm	100% area > 1 E5ohm·cm	70% area > 1 E5ohm·cm
Mechanical Parameters
Diameter	150±0.2 mm
Thickness	500±25 μm
Primary flat orientation	[1-100]±5° or Notch
Primary flat length/depth	47.5±1.5mm or 1 - 1.25mm
TTV	≤5 μm	≤10 μm	≤15 μm
LTV	≤3 μm(5mm*5mm)	≤5 μm(5mm*5mm)	≤10 μm(5mm*5mm)
Bow	-15μm ~ 15μm	-35μm ~ 35μm	-45μm ~ 45μm
Warp	≤35 μm	≤45 μm	≤55 μm
Front(Si-face) roughness(AFM)	Ra≤0.2nm (5μm*5μm)
Structure
Micropipe density	≤1 ea/cm²	≤10 ea/cm²	≤15 ea/cm²
Carbon inclusion density	≤1 ea/cm²	NA
Hexagonal void	None	NA
Metal impurities	≤5E12atoms/cm²		NA
Front Quality
Front	Si
Surface finish	Si-face CMP
Particles	≤60ea/wafer (size≥0.3μm)	NA
Scratches	≤5ea/mm. Cumulative length ≤Diameter	Cumulative length≤300mm	NA
Orange peel/pits/stains/striations/ cracks/contamination	None		NA
Edge chips/indents/fracture/hex plates	None
Polytype areas	None	Cumulative area≤20%	Cumulative area≤30%
Front laser marking	None
Back Quality
Back finish	C-face CMP
Scratches	≤5ea/mm,Cumulative length≤2*Diameter	NA
Back defects (edge chips/indents)	None
Back roughness	Ra≤0.2nm (5μm*5μm)
Back laser marking	"SEMI"
Edge
Edge	Chamfer
Packaging
Packaging	Epi-ready with vacuum packaging Multi-wafer cassette packaging
*Notes： "NA" means no request Items not mentioned may refer to SEMI-STD.