4 Inch N-type SiC Substrate

Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of silicon carbide products for many years. Our 4 Inch N-type SiC Substrate has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

Semicorex has a complete silicon carbide(SiC) wafer products line, including 4H and 6H substrates with N-type, P-type and high purity semi-insulating wafers, they can be with or without epitaxy. 4-inch N-type SiC (silicon carbide) substrate is a type of high-quality wafer made from a single crystal of silicon carbide with an N-type doping.

4 Inch N-type SiC Substrate is mainly used in new energy vehicles, high-voltage transmission and substation, white goods, high-speed trains, electric motors, photovoltaic inverters, pulsed power supplies and other fields, which have the advantages of reducing equipment energy loss, improving equipment reliability, reducing equipment size and improving equipment performance, and have irreplaceable advantages in making power electronic devices.

Items	Production	Research	Dummy
Crystal Parameters
Polytype	4H
Surface orientation error	<11-20 >4±0.15°
Electrical Parameters
Dopant	n-type Nitrogen
Resistivity	0.015-0.025ohm·cm
Mechanical Parameters
Diameter	99.5 - 100mm
Thickness	350±25 μm
Primary flat orientation	[1-100]±5°
Primary flat length	32.5±1.5mm
Secondary flat position	90° CW from primary flat ±5°. silicon face up
Secondary flat length	18±1.5mm
TTV	≤5 μm	≤10 μm	≤20 μm
LTV	≤2 μm(5mm*5mm)	≤5 μm(5mm*5mm)	NA
Bow	-15μm ~ 15μm	-35μm ~ 35μm	-45μm ~ 45μm
Warp	≤20 μm	≤45 μm	≤50 μm
Front(Si-face) roughness(AFM)	Ra≤0.2nm (5μm*5μm)
Structure
Micropipe density	≤1 ea/cm2	≤5 ea/cm2	≤10 ea/cm2
Metal impurities	≤5E10atoms/cm2		NA
BPD	≤1500 ea/cm2	≤3000 ea/cm2	NA
TSD	≤500 ea/cm2	≤1000 ea/cm2	NA
Front Quality
Front	Si
Surface finish	Si-face CMP
Particles	≤60ea/wafer (size≥0.3μm)	NA
Scratches	≤2ea/mm. Cumulative length ≤Diameter	Cumulative length≤2*Diameter	NA
Orange peel/pits/stains/striations/ cracks/contamination	None		NA
Edge chips/indents/fracture/hex plates	None		NA
Polytype areas	None	Cumulative area≤20%	Cumulative area≤30%
Front laser marking	None
Back Quality
Back finish	C-face CMP
Scratches	≤5ea/mm,Cumulative length≤2*Diameter	NA
Back defects (edge chips/indents)	None
Back roughness	Ra≤0.2nm (5μm*5μm)
Back laser marking	1 mm (from top edge)
Edge
Edge	Chamfer
Packaging
Packaging	The inner bag is filled with nitrogen and the outer bag is vacuumed. Multi-wafer cassette, epi-ready.
*Notes： "NA" means no request Items not mentioned may refer to SEMI-STD.