Semicorex provides high purity semi-insulating SiC ingot with 4 inches and 6 inches. We have been manufacturer and supplier of wafers for many years. Our 4" 6" High Purity Semi-Insulating SiC Ingot has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
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4 Inch Semi-insulating SiC Ingot Specification |
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Items |
Production Grade |
Dummy Grade |
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Polytype |
4H |
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Resistivity/ohm ·cm |
NA |
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Diameter |
100.25±0.25 mm |
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Thickness |
≥15 mm |
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Surface orientation error |
0±0.2° |
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Primary flat orientation |
[1- 100]±5.0° |
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Primary flat length |
32.5±1.5 mm |
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Secondary flat |
90.0°CW from Primary ±5.0°, silicon face up |
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Secondary flat length |
17±1.5 mm |
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Micropipe density |
≤1 ea/cm2 |
≤10 ea/cm2 |
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Edge Cracks |
≤3 ea,≤1mm/ea |
≤5 ea,≤3mm/ea |
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Polytype areas |
None |
≤5% area |
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Edge indents |
≤3 ea,≤1mm width and depth |
≤5 ea,≤2mm width and depth |
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Label |
C-face |
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Packaging |
unit-ingot cassette, vacuum packaging |
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6 Inch Semi-insulating SiC Ingot Specification |
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Items |
Production Grade |
Dummy Grade |
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Polytype |
4H |
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Resistivity/ohm ·cm |
NA |
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Diameter |
150.25±0.25 mm |
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Thickness |
≥10 mm |
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Surface orientation error |
0±0.25° |
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Notch orientation |
[1- 100]±5.0° |
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Notch depth |
1~1.25 mm |
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Micropipe density |
≤1 ea/cm2 |
≤10 ea/cm2 |
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Edge Cracks |
≤3 ea,≤1mm/ea |
≤5 ea,≤3mm/ea |
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Polytype areas |
None |
≤5% area |
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Edge indents |
≤3 ea,≤1mm width and depth |
≤5 ea,≤2mm width and depth |
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Label |
C-face |
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Packaging |
unit-ingot cassette, vacuum packaging |
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