3C-SiC Wafer Substrate

3C-SiC (cubic silicon carbide) wafer substrate refers to a specific type of silicon carbide crystal structure that is commonly used as a substrate material in the field of semiconductor device manufacturing. It is an alternative to other silicon-based substrates, such as silicon (Si) or silicon germanium (SiGe), due to its superior material properties.

3C-SiC wafer substrate with the high thermal conductivity, which is second only to diamond. Silicon carbide is known for its excellent thermal conductivity, high breakdown electric field strength, and wide bandgap, which make it well-suited for applications in power electronics, high-temperature devices, and high-frequency devices.