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China wafer suscecptor Manufacturers, Suppliers, Factory

We also offer you product sourcing and flight consolidation expert services. We've our personal manufacturing unit and sourcing business. We can offer you virtually every variety of merchandise associated to our item range for wafer suscecptor,Tantalum Carbide,TaC Coatings,guide ring,SiC crystal growth, We warmly welcome good friends from all walks of life to cooperate with us.
wafer suscecptor, Our company adheres to the spirit of "lower costs, higher quality, and making more benefits for our clients". Employing talents from the same line and adhering to the principle of "honesty, good faith, real thing and sincerity", our company hopes to gain common development with clients from both at home and abroad!

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    Semicorex RTP Carrier for MOCVD Epitaxial Growth is ideal for semiconductor wafer processing applications, including epitaxial growth and wafer handling processing. Carbon graphite susceptors and quartz crucibles are processed by MOCVD on the surface of graphite, ceramics, etc. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Coated Graphite Base Susceptors for MOCVD

    SiC Coated Graphite Base Susceptors for MOCVD

    Semicorex SiC Coated Graphite Base Susceptors for MOCVD are superior quality carriers used in the semiconductor industry. Our product is designed with high-quality silicon carbide that provide excellent performance and long-lasting durability. This carrier is ideal for use in the process of growing an epitaxial layer on the wafer chip.
  • Tantalum Carbide Crucible

    Tantalum Carbide Crucible

    Semicorex Tantalum Carbide Crucible is a crucial component in the semiconductor industry, specifically designed for the growth of Silicon Carbide (SiC) crystals. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • CFC Cylinder

    CFC Cylinder

    Semicorex proudly presents the CFC Cylinder, a cutting-edge carbon-carbon composite material that exemplifies the pinnacle of advanced material science. This exceptional composite offers an unparalleled combination of lightweight properties and robust strength, making it the ideal choice for applications that demand resilience and reliability.
  • SiC Heating Filament

    SiC Heating Filament

    Semicorex SiC Heating Filament is a silicon carbide coated graphite heater designed for wafer heating in advanced semiconductor manufacturing. Choosing Semicorex means selecting a trusted partner that delivers high-purity materials, precision customization, and long-lasting performance for the most demanding thermal processes.*
  • SiC wafer Grinding Plate

    SiC wafer Grinding Plate

    Advanced SiC wafer grinding plate from Semicorex is the precision machining part for achieving ultra-high flatness on semiconductor wafer surfaces. Selecting Semicorex SiC wafer grinding plate goes beyond selecting a high-performance tool, it secures the optimal, accurate, stable and efficient solution for wafer grinding applications.
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  • TaC Coating

    According to the research results, TaC coating can act as a protection and isolation layer to extend graphite component life, improve radial temperature uniformity, maintain SiC sublimation stoichiometry, suppress impurity migration, and reduce energy consumption. Ultimately a TaC-coated graphite crucible set is expected to improve SiC PVT process control and product quality.

  • SiC Epitaxy

    There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's performance.

  • Doping Control in Sublimation SiC Growth

    Silicon carbide (SiC) plays an important role in manufacturing power electronics and high-frequency devices due to its excellent electrical and thermal properties. The quality and doping level of SiC crystals directly affect the performance of the device, so precise control of doping is one of the key technologies in the SiC growth process.

  • Silicon Carbide(SiC) Crystal Growth Furnace

    Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

  • What are the Pros and Cons of Dry Etching and Wet Etching?

    Etching is an essential process in semiconductor manufacturing. This process can be categorized into two types: dry etching and wet etching. Each technique has its own advantages and limitations, making it crucial to understand the differences between them. So, how do you choose the best etching method? What are the pros and cons of dry etching and wet etching?

  • Surface Polishing of Silicon Wafers

    Silicon wafer surface polishing is a crucial process in semiconductor manufacturing. Its primary goal is to achieve extremely high standards of surface flatness and roughness by removing micro-defects, layers of stress damage, and contamination from impurities such as metal ions.

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