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The key to our success is "Good Solution Top quality, Reasonable Value and Efficient Service" for wafer heater,aluminum nitride ceramic,al nitride,aln aluminium nitride,aluminum nitride machining, Seeing believes! We sincerely welcome the new clients overseas to setup business enterprise interactions and also be expecting to consolidate the relationships while using the long-established prospects.
wafer heater, As an experienced manufacturer we also accept customized order and we could make it the same as your picture or sample specification. The main goal of our company is to live a satisfactory memory to all the customers, and establish a long term business relationship with buyers and users all over the world.

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  • Barrel Susceptor Silicon Carbide Coated Graphite

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    Semicorex Barrel Susceptor Silicon Carbide Coated Graphite is a specialized component designed for use in the epitaxy process, particularly in carrying wafers. Contact us today to learn more about how we can help you with your semiconductor wafer processing needs.
  • Epitaxial Susceptor

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    Semicorex Epitaxial Susceptor with SiC coating is designed to support and hold SiC wafers during the epitaxial growth process, ensuring precision and uniformity in semiconductor manufacturing. Choose Semicorex for its high-quality, durable, and customizable products that meet the rigorous demands of advanced semiconductor applications.*
  • 8-inch Waferholder Rings

    8-inch Waferholder Rings

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  • SiC Coated Plate

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  • SiC Fingers

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  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • What is liquid phase epitaxy?

    The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

  • Gallium Nitride Epitaxial Wafers: An Introduction to the Fabrication Process

    Gallium Nitride (GaN) epitaxial wafer growth is a complex process, often utilizing a two-step method. This method involves several critical stages, including high-temperature baking, buffer layer growth, recrystallization, and annealing. By meticulously controlling the temperature throughout these stages, the two-step growth method effectively prevents wafer warping caused by lattice mismatch or stress, making it the predominant fabrication method for GaN epitaxial wafers globally.

  • SiC Cutting

    Silicon carbide (SiC) is highly favored in the semiconductor industry for its excellent physical and chemical properties. However, the high hardness and brittleness of SiC pose considerable challenges to its processing.

  • Thin film growth process

    Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

  • PECVD Process

    Plasma Enhanced Chemical Vapor Deposition (PECVD) is a widely used technology in chip manufacturing. It utilizes the kinetic energy of electrons within plasma to activate chemical reactions in the gas phase, thereby achieving thin-film deposition.

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