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"Control the quality by the details, show the strength by quality". Our company has strived to establish a highly efficient and stable staff team and explored an effective quality control process for Wafer Etch Carrier for PSS,Etch Carrier(ICP/PSS),PSS-Based LED,Sapphire & GaN Plasma Etching,PSS Wafers, Welcome any inquiry to our firm. We will be happy to ascertain helpful business enterprise relationships along with you!
Wafer Etch Carrier for PSS, To achieve reciprocal advantages, our company is widely boosting our tactics of globalization in terms of communication with overseas customers, fast delivery, the best quality and long-term cooperation. Our company upholds the spirit of "innovation, harmony, team work and sharing, trails, pragmatic progress". Give us a chance and we'll prove our capability. With your kind help, we believe that we can create a bright future with you together.

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  • SiC Coated MOCVD Graphite Satellite Platform

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    Semicorex is a reputable supplier and manufacturer of SiC Coated MOCVD Graphite Satellite Platform. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
  • SiC Epi-Wafer Susceptor

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    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC Epi-Wafer Susceptor has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
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  • China remained the largest semiconductor equipment market

    Worldwide sales of semiconductor manufacturing equipment increased 5 percent from $102.6 billion in 2021 to an all-time record of $107.6 billion last year, SEMI, the industry association representing the global electronics design and manufacturing supply chain.

  • Why choose SiC-coated graphite susceptors?

    Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

  • GaN vs SiC

    There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

  • How is Silicon Carbide Manufactured?

  • Application of GaN

    There are many types of gallium nitride (GaN), with silicon-based GaN being the most discussed. This technology involves growing GaN materials directly on a silicon substrate.

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