China Bearing Spacer Sleeve Manufacturers, Suppliers, Factory

The first generation of semiconductor materials is mainly represented by silicon (Si) and germanium (Ge), which began to rise in the 1950s. Germanium was dominant in the early days and was mainly used in low-voltage, low-frequency, medium-power transistors and photodetectors, but due to its poor high temperature resistance and radiation resistance, it was gradually replaced by silicon devices in the late 1960s. Silicon is still the main semiconductor material in the field of microelectronics due to its high technological maturity and cost advantages.

Silicon carbide (SiC) is highly favored in the semiconductor industry for its excellent physical and chemical properties. However, the high hardness and brittleness of SiC pose considerable challenges to its processing.

Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

Silicon carbide (SiC), a prominent structural ceramic, is renowned for its exceptional properties, including high-temperature strength, hardness, elastic modulus, wear resistance, thermal conductivity, and corrosion resistance. These attributes make it suitable for a wide range of applications, from traditional industrial uses in high-temperature kiln furniture, burner nozzles, heat exchangers, sealing rings, and sliding bearings, to advanced applications like ballistic armor, space mirrors, semiconductor wafer chucks, and nuclear fuel cladding.

The single crystal growth furnace is composed of six key systems that work in harmony to ensure efficient and high-quality crystal growth.