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Having a positive and progressive attitude to customer's fascination, our organization constantly improves our solution high-quality to fulfill the requirements of shoppers and further focuses on safety, reliability, environmental prerequisites, and innovation of annealing semiconductor,single crystalline silicon,wafer processing,vacuum chamber furnace,wafer diffusion process, Looking to the long run, a lengthy way to go, regularly striving to become the all employees with full enthusiasm, one hundred times the confidence and put our company built a beautiful environment, advanced merchandise, good quality first-class modern company and work hard!
annealing semiconductor, We have been persisting in the business essence "Quality First, Honoring Contracts and Standing by Reputations, providing customers with satisfying merchandise and service. " Friends both at home and abroad are warmly welcome to establish everlasting business relations with us.

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  • High-Temperature SiC Coating for Plasma Etch Chambers

    High-Temperature SiC Coating for Plasma Etch Chambers

    When it comes to wafer handling processes such as epitaxy and MOCVD, Semicorex's High-Temperature SiC Coating for Plasma Etch Chambers is the top choice. Our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance thanks to our fine SiC crystal coating.
  • Silicon Carbide Valve

    Silicon Carbide Valve

    Semicorex Silicon Carbide Valve is a vital component in various industrial applications, offering unparalleled corrosion resistance, temperature endurance, and mechanical resilience. It's suitable for industries ranging from petrochemical to biopharmaceutical, ensuring efficient and reliable operation in even the most challenging environments.
  • TaC Coating Half-moon

    TaC Coating Half-moon

    Semicorex TaC Coating Half-moon is a specialized component crafted from tantalum carbide (TaC) coated graphite, designed for use in epitaxial processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • 8-inch Waferholder Rings

    8-inch Waferholder Rings

    Semicorex 8-inch Waferholder Rings are designed to provide precise wafer fixation and exceptional performance in aggressive thermal and chemical environments. Semicorex delivers application-specific engineering, tight dimensional control, and consistent SiC coating quality to meet the rigorous demands of advanced semiconductor processing.*
  • Silicon Film

    Silicon Film

    Semicorex Silicon Film, or silicon wafer, is a high-purity semiconductor substrate essential for applications in integrated circuits, solar cells, and MEMS devices. Semicorex expertise in precision manufacturing and stringent quality control ensures that our Silicon Film meets the highest industry standards, providing exceptional reliability and performance for advanced semiconductor applications.*
  • Graphite Single Silicon Pulling Tools

    Graphite Single Silicon Pulling Tools

    Semicorex Graphite Single Silicon Pulling Tools emerge as unsung heroes in the fiery crucible of crystal growth furnaces, where temperatures soar and precision reigns supreme. Their remarkable properties, honed through innovative manufacturing, make them essential for coaxing flawless single crystal silicon into existence.**
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  • What are SiC-coated graphite susceptors?

    The tray (base) that supports SiC wafers, also known as a "susceptor," is a core component of semiconductor manufacturing equipment. And what exactly is this susceptor that carries the wafers?

  • Photovoltaic Industry Development Overview

    By 2027, solar photovoltaic (PV) will overtake coal as the world's largest installed capacity. The cumulative installed capacity of solar PV nearly triples in our forecast, growing by nearly 1,500 gigawatts over this period, and will surpass natural gas by 2026 and coal by 2027.

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

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  • Tantalum carbide coatings in semiconductor industry

    The development of high-powered blue and UV LEDs has enabled the creation of full-color LED TV displays, as well as white LED automotive and domestic lighting. These LEDs are based on Gallium Nitride, which is deposited on substrate wafers supported by CVD SiC-coated graphite susceptor using the MOCVD process.

  • Silicon Carbide Heating Elements

    In the world of high-temperature heating, achieving precision and reliability in extreme conditions is paramount. To meet these challenges, innovative materials and designs have been developed to push the boundaries of what's possible. One such advancement is the Silicon Carbide (SiC) coated graphite heating element.

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