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With our outstanding management, robust technical capability and strict top quality regulate system, we carry on to supply our shoppers with reputable top quality, reasonable charges and excellent companies. We purpose at becoming amongst your most reliable partners and earning your fulfillment for ain ceramic,ain aluminium nitride,aluminum nitride,aluminum and nitride,aln thermal conductivity, Seeing believes! We sincerely welcome the new prospects abroad to set up company interactions and also expect to consolidate the interactions with all the long-established clients.
ain ceramic, Our R&D department always designs with new fashion ideas so we could introduce up-to-date fashion styles every month. Our strict production management systems always ensure stable and high quality goods. Our trade team provides timely and efficient services. If there are any interest and inquiry about our products, you should contact us in time. We would like to establish a business relationship with your honored company.

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    In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).

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    Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

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    SiC substrates are the most crucial component in the silicon carbide industry, accounting for nearly 50% of its value. Without SiC substrates, it is impossible to manufacture SiC devices, making them the essential material foundation.

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