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Wafer Handling Equipment, Our company offers the full range from pre-sales to after-sales service, from product development to audit the use of maintenance, based on strong technical strength, superior product performance, reasonable prices and perfect service, we are going to continue to develop, to supply the high-quality merchandise and services, and promote lasting cooperation with our customers, common development and create a better future.

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  • GaN-on-Si Epi Wafer Chuck

    GaN-on-Si Epi Wafer Chuck

    Semicorex GaN-on-Si Epi Wafer Chuck is a precision-engineered substrate holder designed specifically for the handling and processing of gallium nitride on silicon epitaxial wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Vertical Silicon Boat

    Vertical Silicon Boat

    Semicorex Vertical Silicon Boat is a critical component used in semiconductor manufacturing processes, Semicorex delivers customized vertical Silicon boat with unparalleled quality and precision, tailored to meet the stringent demands of the semiconductor industry.*
  • Quartz 12 inch Outer Tube

    Quartz 12 inch Outer Tube

    Semicorex Quartz 12 Inch Outer Tube is a specialized component meticulously designed for use in the semiconductor industry, where precision, reliability, and high performance are paramount. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Wafer Cassette Carrier

    Wafer Cassette Carrier

    Semicorex high-quality Wafer Cassette Carrier, a crucial component designed for excellence in semiconductor processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Ceramic Electrostatic Chuck

    Ceramic Electrostatic Chuck

    Semicorex Ceramic Electrostatic Chuck (ESC) is a specialized tool meticulously crafted to meet the rigorous demands of semiconductor manufacturing. With our steadfast commitment to providing top-quality products at competitive prices, we are ready to become your long-term partner in China.*
  • Tantalum Carbide Coated Graphite Susceptor

    Tantalum Carbide Coated Graphite Susceptor

    Semicorex provides Tantalum Carbide Coated Graphite Susceptor with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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  • Oxidation Process

    The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

  • What is Thermal Annealing

    The annealing process, also known as Thermal Annealing, is a crucial step in semiconductor manufacturing.

  • Advantages and Disadvantages of Gallium Nitride (GaN) Applications

    As the world looks for new opportunities in semiconductors, gallium nitride continues to stand out as a potential candidate for future power and RF applications. However, for all the benefits it offers, it still faces a major challenge; there are no P-type (P-type) products. Why is GaN touted as the next major semiconductor material, why is the lack of P-type GaN devices a major drawback, and what does this mean for future designs?

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

  • Differences between SiC crystals with different structures

    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

  • SiGe and Si Selective Etching Technology

    A critical step in the fabrication of n-type GAAFETs involves the high-selectivity etching of SiGe:Si stacks prior to the deposition of inner spacers, generating silicon nanosheets and releasing channels.

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