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All we do is usually affiliated with our tenet " Buyer to start with, Belief to start with, devoting about the food packaging and environmental defense for UV LED Chip Epitaxy,Silicon Carbide-Coated,SiC Graphite Supplies Susceptors,Graphite Susceptors for Silicon,SiC Coating for GaN Epitaxy, sincerity and strength ,constantly preserve approved superior quanlity ,welcome to our factoty for pay a visit to and instruction and organization.
UV LED Chip Epitaxy, Our main objectives are to provide our customers worldwide with good quality, competitive price, satisfied delivery and excellent services. Customer satisfaction is our main goal. We welcome you to visit our showroom and office. We're looking forward to establish business relation with you.

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  • Si Dummy Wafer

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  • LPE Part

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    Semicorex LPE Part is a SiC-coated component specifically designed for the SiC epitaxy process, offering exceptional thermal stability and chemical resistance to ensure efficient operation in high-temperature and harsh environments. By choosing Semicorex products, you benefit from high-precision, long-lasting custom solutions that optimize the SiC epitaxy growth process and enhance production efficiency.*
  • Teflon Cassettes

    Teflon Cassettes

    Semicorex Teflon Cassettes are high-purity PTFE wafer carriers designed for safe, contamination-free processing in corrosive chemical environments. Choose Semicorex for industry-leading precision, reliable quality, and customizable solutions backed by expertise in semiconductor handling systems.*
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    Semicorex Graphite Top Plates are precision-engineered fixtures designed for secure and reliable handling of hot glass bottles in high-temperature manufacturing environments. Choose Semicorex for unmatched material quality, custom machining capabilities, and consistent performance trusted by leading glass producers worldwide.*
  • PFA Wafer Cassettes

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  • Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

    In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

    The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

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    Semiconductors are materials whose electrical conductivity at room temperature lies between that of insulators and conductors. By introducing impurities, a process known as doping, these materials can become conductors.

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