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We are also focusing on improving the stuff management and QC system so that we could keep great advantage in the fiercely-competitive business for Single Crystal Graphite Heating,Carrier SIC Epitaxy,Graphite Susceptors With Silicon Carbide Coating,SiC Graphite Trays,SiC Coating Of Semiconductor, Our organization has been devoting that "customer first" and committed to helping clients expand their small business, so that they become the Big Boss !
Single Crystal Graphite Heating, We attained ISO9001 which provides solid foundation for our further development. Persisting in "High quality, Prompt Delivery, Competitive Price", now we have established long-term cooperation with clients from both overseas and domestically and get new and old clients' high comments. It is our great honor to meet your demands. We have been sincerely expecting your attention.

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    Semicorex SiC Coated Barrel Susceptor for LPE Epitaxial Growth is a high-performance product designed to provide consistent and reliable performance over an extended period. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for the growth of high-quality epitaxial layers on wafer chips. Its customizability and cost-effectiveness make it a highly competitive product in the market.
  • 6 Inch Semi-Insulating HPSI SiC Wafer

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    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of silicon carbide products for many years. Our double-polished 6 Inch Semi-Insulating HPSI SiC Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Silicon Carbide Tray

    Silicon Carbide Tray

    Semicorex Silicon Carbide Tray is built to withstand extreme conditions while ensuring remarkable performance. It plays a crucial role in the ICP etching process, semiconductor diffusion, and the MOCVD epitaxial process.
  • Quartz Crucible

    Quartz Crucible

    Semicorex quartz crucible is designed for use in the single-crystal growth of semiconductor materials, ensuring optimal performance and crystal quality. Choose Semicorex for our superior craftsmanship, precision engineering, and commitment to delivering products that meet the highest industry standards.*
  • Rigid Graphite Felt

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    Semicorex Rigid Graphite Felt is a high-performance thermal insulation material made from PAN-based and viscose-based carbon fiber, widely used in high-temperature industrial furnaces. Choose Semicorex for its advanced manufacturing processes and proven expertise in delivering durable and reliable solutions for demanding semiconductor applications.*
  • TaC Coated Planetary Plate

    TaC Coated Planetary Plate

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    Isostatic graphite is a type of graphite with an ultra-fine grain. It is used for applications where the mechanical properties of other fine-grained graphites are inadequate.

  • Quartz products in semiconductor applications

    In the semiconductor industry, quartz is widely used, and high-purity quartz products are even more important consumables in wafer production. The production of silicon single crystal crucibles, crystal boats, diffusion furnace core tubes, and other quartz components must use high-purity quartz glass products.

  • Introducing Gallium Oxide(Ga2O3)

    Gallium oxide (Ga2O3) as an "ultra-wide bandgap semiconductor" material has garnered sustained attention. Ultra-wide bandgap semiconductors fall under the category of "fourth-generation semiconductors," and in comparison to third-generation semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), gallium oxide boasts a bandgap width of 4.9eV, surpassing silicon carbide's 3.2eV and gallium nitride's 3.39eV. A wider bandgap implies that electrons require more energy to transition from the valence band to the conduction band, endowing gallium oxide with characteristics like high voltage resistance, high-temperature tolerance, high power capability, and radiation resistance.

  • Can you grind silicon carbide?

    Silicon carbide (SiC) has important applications in areas such as power electronics, high-frequency RF devices, and sensors for high-temperature-resistant environments due to its excellent physicochemical properties. However, the slicing operation during SiC wafer processing introduces damages on the surface, which, if left untreated, can expand during the subsequent epitaxial growth process and form epitaxial defects, thus affecting the yield of the device.

  • SK Siltron Expands Its SiC Wafer Production with a $544 Million Loan from the U.S. Department of Energy

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  • Semiconductor doping process

    One of the unique properties of semiconductor materials is that their conductivity, as well as their conductivity type (N-type or P-type), can be created and controlled through a process called doping. This involves introducing specialized impurities, known as dopants, into the material to form junctions on the surface of the wafer. The industry employs two main doping techniques: thermal diffusion and ion implantation.

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