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We are also focusing on improving the stuff management and QC system so that we could keep great advantage in the fiercely-competitive business for Single Crystal Graphite Heating,Carrier SIC Epitaxy,Graphite Susceptors With Silicon Carbide Coating,SiC Graphite Trays,SiC Coating Of Semiconductor, Our organization has been devoting that "customer first" and committed to helping clients expand their small business, so that they become the Big Boss !
Single Crystal Graphite Heating, We attained ISO9001 which provides solid foundation for our further development. Persisting in "High quality, Prompt Delivery, Competitive Price", now we have established long-term cooperation with clients from both overseas and domestically and get new and old clients' high comments. It is our great honor to meet your demands. We have been sincerely expecting your attention.

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  • AlN Heater

    AlN Heater

    The AlN Heater by Semicorex is designed to support and heat silicon wafers. Crafted from high-purity aluminum nitride (AlN), this heater offers an array of advanced features that cater to the needs of various high-precision applications, particularly in the semiconductor industry.**
  • TaC Ring

    TaC Ring

    Semicorex TaC ring is a high-performance component designed for SiC single crystal growth, ensuring optimal gas flow distribution and temperature control. Choose Semicorex for our expertise in advanced materials and precision engineering, providing durable and reliable solutions that enhance the efficiency and quality of your semiconductor processes.*
  • Silicon Carbide Composite Membrane

    Silicon Carbide Composite Membrane

    Semicorex Silicon Carbide Composite Membrane is an advanced filtration solution, combining the superior properties of silicon carbide, alumina, and calcium oxide to deliver high-performance filtration across a wide range of industries. Semicorex is the trusted choice for this cutting-edge technology, offering unmatched quality, reliability, and tailored solutions that ensure optimal efficiency and long-term performance for your filtration needs.*
  • SiC Pipes

    SiC Pipes

    Semicorex SiC Pipes are high-performance silicon carbide ceramic components designed for semiconductor furnace applications, delivering exceptional thermal, mechanical, and chemical stability in demanding process environments. Choose Semicorex for precision-engineered SiC pipes that ensure consistent quality, extended service life, and maximum furnace efficiency.*
  • Ceramic Electrostatic Chucks

    Ceramic Electrostatic Chucks

    Semicorex ceramic electrostatic chucks are precision electrostatic adsorption components made of high-performance alumina and aluminum nitride ceramics, which uses the principle of electrostatic adsorption to clamp and fix wafers. It is widely used in semiconductor manufacturing fields. Semicorex has advanced technology, high-quality materials, and cost-effective products. We look forward to becoming your reliable supply partner in China.
  • Impregnated Graphite Crucible

    Impregnated Graphite Crucible

    Semicorex Impregnated Graphite Crucible is a good-quality and cost-efficient product for various applications, the material efficiently longer the lifespan than the ordinary graphite.Semicorex provides customized products to meet customers’ needs.*
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  • What is CVD for SiC

  • What is the diffusion furnace?

    A diffusion furnace is a specialized piece of equipment used to introduce impurities into semiconductor wafers in a controlled manner. These impurities, called dopants, change the electrical properties of semiconductors, allowing different types of electronic components to be made. This controlled diffusion process is critical to the production of transistors, diodes and integrated circuits.

  • The first 6-inch Gallium Oxide substrate industrialization company

    Recently, our company announced that the company has successfully developed a 6-inch Gallium Oxide single crystal using the casting method, becoming the first domestic industrialized company to master the 6-inch Gallium Oxide single crystal substrate preparation technology.

  • Applications of TaC Coated Graphite Components

    In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).

  • Silicon Carbide Substrate

    The process of silicon carbide substrate is complex and difficult to manufacture. SiC substrate occupies the main value of the industry chain, accounting for 47%. It is expected that with the expansion of production capacity and the improvement of yield in the future, it is expected to drop to 30%.

  • Oxidation Process

    The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

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