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High quality Initial,and Buyer Supreme is our guideline to offer the ideal assistance to our shoppers.At present, we are striving our best to become amongst the ideal exporters inside our industry to satisfy shoppers more want for SiC Graphite Supplies Susceptors,Silicon Carbide-Coated,Graphite Susceptors for Silicon,SiC Coating for GaN Epitaxy,Planet Satellite Platter, We have been prepared to offer you the top suggestions on the designs of one's orders in a professional way if you need. During the meantime, we retain on developing new technologies and building new designs so as for making you ahead within the line of this business.
SiC Graphite Supplies Susceptors, Our company has a skillful sales team, strong economic foundation, great technical force, advanced equipment, complete testing means, and excellent after-sales services. Our goods have beautiful appearance, fine workmanship and superior quality and win the unanimous approvals of the customers all over the world.

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  • SiC Graphite RTP Carrier Plate for MOCVD

    SiC Graphite RTP Carrier Plate for MOCVD

    Semicorex SiC Graphite RTP Carrier Plate for MOCVD offers superior heat resistance and thermal uniformity, making it the perfect solution for semiconductor wafer processing applications. With a high-quality SiC coated graphite, this product is engineered to withstand the harshest deposition environment for epitaxial growth. The high thermal conductivity and excellent heat distribution properties ensure reliable performance for RTA, RTP, or harsh chemical cleaning.
  • Semiconductor Wafer Carrier for MOCVD Equipment

    Semiconductor Wafer Carrier for MOCVD Equipment

    You can rest assured to buy Semiconductor Wafer Carrier for MOCVD Equipment from our factory. Semiconductor wafer carriers are an essential component of MOCVD equipment. They are used to transport and protect semiconductor wafers during the manufacturing process. Semiconductor Wafer Carriers for MOCVD Equipment are made of high-purity materials and are designed to maintain the integrity of the wafers during processing.
  • Monocrystalline Silicon Wafer Susceptor

    Monocrystalline Silicon Wafer Susceptor

    Semicorex Monocrystalline Silicon Wafer Susceptor is the ideal solution for graphite epitaxy and wafer handling processes. Our ultra-pure product ensures minimal contamination and exceptional long-life performance, making it a popular choice in many European and American markets. As a leading provider of semiconductor wafer carriers in China, we look forward to becoming your long-term partner.
  • Tantalum Carbide Coated Graphite Parts

    Tantalum Carbide Coated Graphite Parts

    Semicorex provide high-quality Tantalum Carbide Coated Graphite Parts with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • MOCVD Waferholder

    MOCVD Waferholder

    Semicorex MOCVD Waferholder is an indispensable component for SiC epitaxy growth, offering superior thermal management, chemical resistance, and dimensional stability. By choosing Semicorex's waferholder, you enhance the performance of your MOCVD processes, leading to higher quality products and greater efficiency in your semiconductor manufacturing operations. *
  • Porous Alumina Chucks

    Porous Alumina Chucks

    Semicorex Porous Alumina Chucks are microporous black alumina vacuum fixture with 35–40% porosity, designed to provide uniform suction and safe wafer handling in semiconductor manufacturing. Choosing Semicorex means reliable ceramic engineering, superior material quality, and consistent performance that safeguard yield and process stability.*
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  • How to Manufacture Graphite Rods?

    Compression molding, isostatic pressing, and rod extrusion are the three most common methods for producing graphite rods, similar to those used for creating graphite tubes.

  • Silicon Carbide Heating Elements

    In the world of high-temperature heating, achieving precision and reliability in extreme conditions is paramount. To meet these challenges, innovative materials and designs have been developed to push the boundaries of what's possible. One such advancement is the Silicon Carbide (SiC) coated graphite heating element.

  • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

    Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

  • What Is Silicon Carbide (SiC)?

    Semiconductor materials can be divided into three generations according to the time sequence. The first generation of germanium, silicon and other common monomaterials, which is characterised by convenient switching, generally used in integrated circuits. The second generation of gallium arsenide, indium phosphide and other compound semiconductors, mainly used for light-emitting and communication materials.

  • GaN Single Crystal

    Semiconductor technology has been the backbone of modern civilization, fundamentally transforming the way we live, work, and interact with the world. It has enabled unprecedented advancements in various fields including information technology, energy, telecommunications, and healthcare. From the microprocessors that power our smartphones and computers, to the sensors in medical devices, and the power electronics in renewable energy systems, semiconductors are at the core of nearly every technological innovation of the past century.

  • Understanding the Etching Differences Between Silicon and Silicon Carbide Wafers

    Etching Process: Silicon vs. Silicon Carbide

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