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    Semicorex provides high-quality isostatic graphite with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coating Plate

    TaC Coating Plate

    Semicorex TaC Coating Plate stands out as a high-performance component for demanding epitaxial growth process and further semiconductor manufacturing environments.With its series of superior properties,it can ultimately enhance the productivity and cost-effectiveness of advanced semiconductor fabrication processes.**
  • SiC Ceramic Seal Ring

    SiC Ceramic Seal Ring

    The SiC Ceramic Seal Ring is renowned for its robust performance and durability. Semicorex offers high-quality SiC Ceramic Seal Rings that meet the stringent demands of modern industry. These rings have become indispensable in enhancing the efficiency and reliability of mechanical seals.**
  • SiC Dummy Wafer

    SiC Dummy Wafer

    Semicorex SiC Dummy Wafer is a specialized tool in semiconductor manufacturing, designed primarily for experimental and testing purposes.**
  • High-Purity Quartz Crucibles

    High-Purity Quartz Crucibles

    Semicorex High-Purity Quartz Crucibles are critical component in the semiconductor industry, designed for the high-precision growth of single-crystal silicon. Semicorex's products, known for their exceptional quality and reliability, provide industry-leading solutions for the most demanding manufacturing processes.*
  • Graphite Copper Sleeve

    Graphite Copper Sleeve

    Semicorex Graphite Copper Sleeve is a type of sleeve that relies on its own lubricant for lubrication. The product uses copper alloy as the base material, with orderly arranged and appropriately sized holes drilled into the base, and then graphite plugs are embedded in it. Semicorex can supply the finished graphite copper sleeve, or customized graphite plugs.*
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  • Tantalum carbide coatings in semiconductor industry

    The development of high-powered blue and UV LEDs has enabled the creation of full-color LED TV displays, as well as white LED automotive and domestic lighting. These LEDs are based on Gallium Nitride, which is deposited on substrate wafers supported by CVD SiC-coated graphite susceptor using the MOCVD process.

  • Introducing Gallium Oxide(Ga2O3)

    Gallium oxide (Ga2O3) as an "ultra-wide bandgap semiconductor" material has garnered sustained attention. Ultra-wide bandgap semiconductors fall under the category of "fourth-generation semiconductors," and in comparison to third-generation semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), gallium oxide boasts a bandgap width of 4.9eV, surpassing silicon carbide's 3.2eV and gallium nitride's 3.39eV. A wider bandgap implies that electrons require more energy to transition from the valence band to the conduction band, endowing gallium oxide with characteristics like high voltage resistance, high-temperature tolerance, high power capability, and radiation resistance.

  • Silicon Carbide(SiC) Crystal Growth Furnace

    Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

  • SiC Boats vs. Quartz Boats: Current Usage and Future Trends in Semiconductor Manufacturing

    This article delves into the usage and future trajectory of silicon carbide (SiC) boats in relation to quartz boats within the semiconductor industry, specifically focusing on their applications in solar cell manufacturing.

  • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

    Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

  • Homoepitaxy and Heteroepitaxy Explained Simply

    Homoepitaxy and heteroepitaxy play pivotal roles in material science. Homoepitaxy involves the growth of a crystalline layer on a substrate of the same material, ensuring minimal defects due to perfect lattice matching. In contrast, heteroepitaxy grows a crystalline layer on a different material substrate, which can lead to challenges like lattice mismatch. These processes are crucial in advancing semiconductor devices and thin films. For instance, heteroepitaxy significantly impacts microelectronics and quantum optics, contributing to innovations like Light Emitting Diodes.

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