English
Home > Products > Metal OrGaNic CVD

China Metal OrGaNic CVD Manufacturers, Suppliers, Factory

Our enterprise insists all along the standard policy of "product good quality is base of organization survival; client gratification could be the staring point and ending of an enterprise; persistent improvement is eternal pursuit of staff" and the consistent purpose of "reputation to start with, purchaser first" for Metal OrGaNic CVD,Silicon Carbon,12 Inch Wafer,1 Inch Wafer Carrier,Epitaxial Silicon Growth, Our items are regularly supplied to lots of Groups and lots of Factories. Meanwhile, our products are sold to the USA, Italy, Singapore, Malaysia, Russia, Poland, plus the Middle East.
Metal OrGaNic CVD, We adopt advanced production equipment and technology, and perfect testing equipment and methods to ensure our product quality. With our high-level talents, scientific management, excellent teams, and attentive service, our products are favored by domestic and foreign customers. With your support, we will build a better tomorrow!

Related Products

Hot Products

  • CVD Chemical Vapor Deposition Furnaces

    CVD Chemical Vapor Deposition Furnaces

    Semicorex CVD Chemical Vapor Deposition furnaces make the manufacture of high-quality epitaxy more efficient. We provide custom furnace solutions. Our CVD Chemical Vapor Deposition furnaces have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Ga2O3 Epitaxy

    Ga2O3 Epitaxy

    Step into a new era of semiconductor excellence with Semicorex Ga2O3 Epitaxy, a groundbreaking solution that redefines the boundaries of power and efficiency. Engineered with precision and innovation, Ga2O3 epitaxy offers a platform for next-generation devices, promising unmatched performance across various applications.
  • Wafer Cassette

    Wafer Cassette

    Semicorex wafer cassette made of PFA (Perfluoroalkoxy) is specifically designed for use in semiconductor processes. PFA is a high-performance fluoropolymer known for its excellent chemical resistance, thermal stability, and low particle generation characteristics. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Epitaxial Single-crystal Si Plate

    Epitaxial Single-crystal Si Plate

    the Epitaxial Single-crystal Si Plate encapsulates the zenith of refinement, durability, and dependability for applications pertaining to graphite epitaxy and wafer manipulation. It is distinguished by its density, planarity, and thermal management capabilities, positioning it as the optimal selection for rigorous operational conditions. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • Wafer Cassettes

    Wafer Cassettes

    Semicorex PFA Wafer Cassettes are high-performance component used to safely hold and transport wafers during semiconductor processing. Choose Semicorex for its industry-leading quality, ensuring superior wafer protection, contamination control, and compatibility with automated systems.*
  • Carbon-carbon composite flow guides

    Carbon-carbon composite flow guides

    Carbon-carbon composite flow guides are the advanced cylindrical semiconductor components, serving as the brilliant solutions to guarantee the successful fabrication of single-crystal silicon in high-temperature pulling systems. They can serve both as gas flow directors and thermal insulators during high temperature single-crystal silicon production.
  • Related Blog
  • Reviews

  • Substantial growth of the SiC coated graphite susceptor market

  • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

    Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

  • Differences between SiC crystals with different structures

    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • Research Progress of TaC Coatings on Carbon-Based Material Surfaces

    Carbon-based materials such as graphite, carbon fibers, and carbon/carbon (C/C) composites are known for their high specific strength, high specific modulus, and excellent thermal properties, making them suitable for a wide range of high-temperature applications. These materials are widely utilized in aerospace, chemical engineering, and energy storage. However, their susceptibility to oxidation and corrosion in high-temperature environments, along with poor scratch resistance, restricts their further application.

  • Annealing Processes in Modern Semiconductor Manufacturing

    As technology nodes continue to shrink, the formation of ultra-shallow junctions presents significant challenges. Thermal annealing processes including Rapid thermal annealing (RTA) and flash lamp annealing (FLA) are vital techniques that maintain high impurity activation rates while minimizing diffusion, ensuring optimal device performance.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept