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China MOCVD Reactors Manufacturers, Suppliers, Factory

With our exceptional administration, robust technical capability and strict high-quality control procedure, we carry on to provide our consumers with dependable high-quality, reasonable selling prices and superb providers. We aim at becoming amongst your most responsible partners and earning your pleasure for MOCVD Reactors,tantalum carbide tac,tantalum carbide coatings,TaC coated,MOCVD, We warmly welcome good friends from all walks of life to cooperate with us.
MOCVD Reactors, Welcome to visit our company and factory, there are various solutions displayed in our showroom that will meet your expectation, meanwhile, if you are convenient to visit our website, our sales staff will try their efforts to deliver you the best service

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    Semiconductors are materials that guide electrical properties between conductors and insulators, with equal probability of loss and gain of electrons in the outermost layer of the atomic nucleus, and are easily made into PN junctions. Such as "silicon (Si)", "germanium (Ge)" and other materials.

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    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

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    As a wide-bandgap (WBG) semiconductor material, SiC's wider energy difference gives it higher thermal and electronic properties compared to traditional Si. This feature enables power devices to operate at higher temperatures, frequencies and voltages.

  • What is graphitization degree?

    The degree of graphitization is an essential measure used to assess how close carbon atoms are to forming a tightly-packed hexagonal graphite crystal structure.

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