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  • ICP Plasma Etching Tray

    ICP Plasma Etching Tray

    Semicorex's ICP Plasma Etching Tray is engineered specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers provide even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • 850V High Power GaN-on-Si Epi Wafer

    850V High Power GaN-on-Si Epi Wafer

    Semicorex provides 850V High Power GaN-on-Si Epi Wafer. Compared to other substrates for HMET power devices, 850V High Power GaN-on-Si Epi Wafer enables larger sizes and more diversified applications, and can be quickly introduced into the mainstream fabs' silicon-based chip. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • PBN/PG Heaters

    PBN/PG Heaters

    Semicorex PBN/PG Heaters (Pyrolytic Boron Nitride/Pyrolytic Graphite) are engineered from advanced Boron Nitride ceramic materials, meticulously crafted to withstand extreme temperatures exceeding 1700°C. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Al2O3 Vacuum Chuck

    Al2O3 Vacuum Chuck

    Semicorex Al2O3 Vacuum Chuck is designed to meet the rigorous demands of various semiconductor production processes, including thinning, dicing, cleaning, and transporting wafers. **
  • Al2O3 Substrate

    Al2O3 Substrate

    Semicorex proudly presents the Al2O3 Substrate, a versatile and high-performance material crafted from high-purity aluminum oxide (alumina). This advanced ceramic substrate is lauded for its exceptional properties, making it a cornerstone in various high-tech industries, including electronics, optoelectronics, and solid oxide fuel cells.**
  • Silicon Shield Ring

    Silicon Shield Ring

    Semicorex Silicon Shield Ring is a high-purity silicon component engineered for advanced plasma etching systems, serving as both a protective shield and an auxiliary electrode. Semicorex ensures ultra-clean performance, process stability, and superior etching results with precision-engineered semiconductor components.*
  • Related Blog
  • Reviews

  • What is CVD process in semiconductor?

    Chemical vapor deposition CVD refers to the introduction of two or more gaseous raw materials into a reaction chamber under vacuum and high temperature conditions, where the gaseous raw materials react with each other to form a new material, which is deposited on the wafer surface.

  • Can you grind silicon carbide?

    Silicon carbide (SiC) has important applications in areas such as power electronics, high-frequency RF devices, and sensors for high-temperature-resistant environments due to its excellent physicochemical properties. However, the slicing operation during SiC wafer processing introduces damages on the surface, which, if left untreated, can expand during the subsequent epitaxial growth process and form epitaxial defects, thus affecting the yield of the device.

  • Differences between SiC crystals with different structures

    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

  • What are the Pros and Cons of Dry Etching and Wet Etching?

    Etching is an essential process in semiconductor manufacturing. This process can be categorized into two types: dry etching and wet etching. Each technique has its own advantages and limitations, making it crucial to understand the differences between them. So, how do you choose the best etching method? What are the pros and cons of dry etching and wet etching?

  • What is graphitization degree?

    The degree of graphitization is an essential measure used to assess how close carbon atoms are to forming a tightly-packed hexagonal graphite crystal structure.

  • Application of GaN

    There are many types of gallium nitride (GaN), with silicon-based GaN being the most discussed. This technology involves growing GaN materials directly on a silicon substrate.

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