Porous Tantalum Carbide Ceramic

Semicorex porous tantalum carbide ceramic is an ultra-high-temperature ceramic material with a melting point around 3880℃, which can maintain stable performance in the challenging high-temperature and high-corrosion operating environments thanks to the following excellent performance characteristics.

1. Superb thermal property

The maximum working temperature of Semicorex porous tantalum carbide ceramic can be up to 3200℃, and it can operate stably at high-temperature silicon carbide crystal growth conditions for a long time without any deformation or softening.

2. Exceptional chemical stability

Semicorex porous tantalum carbide ceramic exhibits better corrosion resistance and oxidation resistance than conventional ceramics. It can effectively withstand the corrosion of high-temperature oxygen and Si vapor in the crystal growth process.

3. Special porous structure

Semicorex porous tantalum carbide ceramic features uniformly distributed internal pores, with a porosity between 10-60% ( customizable ) and a through-pore rate of over 98%. This special structure enables vapor-phase elements like Si and C to flow and diffuse smoothly inside the crystal growth furnace, greatly facilitating the growth of high-quality crystals.

Application in silicon carbide crystal growth

During silicon carbide crystal growth via the PVT process, Semicorex porous tantalum carbide ceramic functions primarily in vapor-phase element filtration, furnace temperature gradient regulation and gas material flow guidance. Different from conventional porous TaC-coated graphite materials, Semicorex porous tantalum carbide ceramic shows distinct advantages: It eliminates porous TaC-coated graphite materials’ drawback of a low through-pore rate caused by coating treatment, while avoiding porous TaC-coated graphite materials’ pain point of coating peeling encountered in service. By using Semicorex porous tantalum carbide ceramic, you can effectively inhibit carbon inclusion defects in silicon carbide crystal growth, thereby greatly improving the crystal growth quality and product yield.