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How Advanced Materials Solve 3 Critical Challenges in Semiconductor Furnace Design

The race to shrink transistor sizes and scale solar cell efficiency is pushing thermal processing equipment to its limits.

Advantages of TaC Coating in SiC Single Crystal Growth

Currently, silicon carbide dominates the third generation of semiconductors. In the cost structure of silicon carbide devices, substrates account for 47%, and epitaxy contributes 23%. Together, these two components represent about 70% of the overall manufacturing cost, making them crucial in the sil......

Applications of Silicon Carbide

Among the core components of electric vehicles, automotive power modules—primarily utilizing IGBT technology—play a crucial role. These modules not only determine the key performance of the electric drive system but also account for over 40% of the cost of the motor inverter.

The Application Prospects of 12-Inch Silicon Carbide Substrates

Silicon carbide (SiC), as a wide bandgap semiconductor material, offers unparalleled advantages in high-power, high-temperature, and high-frequency applications.

Czochralski method

Wafers are sliced from crystal rods, which are produced from polycrystalline and pure undoped intrinsic materials. The process of transforming polycrystalline material into single crystals through melting and recrystallization is known as crystal growth. Currently, two main methods are employed for ......

Wafer manufacturing

Wafers are essential raw materials for integrated circuits, power devices, and semiconductor discrete devices. Over 90% of integrated circuits are manufactured using high-purity, high-quality wafers. The quality and supply capacity of these wafers within the industry are directly linked to the overa......

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