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Thin film growth process

Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

Heteroepitaxy of 3C-SiC: An Overview

The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for......

Monocrystalline silicon vs. polycrystalline silicon

Single crystal silicon and polycrystalline silicon each have their own unique advantages and applicable scenarios. Single crystal silicon is suitable for high-performance electronic products and microelectronics due to its excellent electrical and mechanical properties. Polycrystalline silicon, on t......

Substrate and Epitaxy

In the process of wafer preparation, there are two core links: one is the preparation of the substrate, and the other is the implementation of the epitaxial process. The substrate, a wafer carefully made of semiconductor single crystal material, can be directly put into the wafer manufacturing proce......

Silicon Wafer

Silicon material is a solid material with certain semiconductor electrical properties and physical stability, and provides substrate support for the subsequent integrated circuit manufacturing process. It is a key material for silicon-based integrated circuits. More than 95% of semiconductor devices......

SiC Cutting

Silicon carbide (SiC) is highly favored in the semiconductor industry for its excellent physical and chemical properties. However, the high hardness and brittleness of SiC pose considerable challenges to its processing.

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