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Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modi......

What is Thermal Annealing

The annealing process, also known as Thermal Annealing, is a crucial step in semiconductor manufacturing.

Why Use Ultrasonic Cleaning in Semiconductor Manufacturing

When cleaning wafers, ultrasonic cleaning and megasonic cleaning are commonly used to remove particles from the wafer surface.

The Study on the Distribution of Electrical Resistivity in n-Type 4H-SiC Crystals

4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.

What is Crystal Growth Furnace System

The single crystal growth furnace is composed of six key systems that work in harmony to ensure efficient and high-quality crystal growth.

Monocrystalline Silicon Manufacturing

The three primary methods used in monocrystalline silicon manufacturing are the Czochralski (CZ) method, the Kyropoulos method, and the Float Zone (FZ) method.

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