The single crystal growth furnace is composed of six key systems that work in harmony to ensure efficient and high-quality crystal growth.
The three primary methods used in monocrystalline silicon manufacturing are the Czochralski (CZ) method, the Kyropoulos method, and the Float Zone (FZ) method.
Oxidation processes play a critical role in preventing such problems by creating a protective layer on the wafer, known as the oxide layer, which acts as a barrier between different chemicals.
Silicon nitride (Si3N4) is a key material in the development of advanced high-temperature structural ceramics.
Etching Process: Silicon vs. Silicon Carbide
In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process.