4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.
The single crystal growth furnace is composed of six key systems that work in harmony to ensure efficient and high-quality crystal growth.
The three primary methods used in monocrystalline silicon manufacturing are the Czochralski (CZ) method, the Kyropoulos method, and the Float Zone (FZ) method.
Oxidation processes play a critical role in preventing such problems by creating a protective layer on the wafer, known as the oxide layer, which acts as a barrier between different chemicals.
Silicon nitride (Si3N4) is a key material in the development of advanced high-temperature structural ceramics.
Etching Process: Silicon vs. Silicon Carbide