Semicorex graphite crucibles engineered for exceptional thermal stability and contamination control in semiconductor crystal growth processes. Choose our graphite crucibles for unmatched purity, performance, and reliability in semiconductor crystal growth. *
Semicorex Graphite crucibles are critical components in the semiconductor manufacturing process, particularly during the crystal growth stage. These high-performance containers are engineered to withstand the extreme conditions required to produce high-purity silicon or compound semiconductor crystals through methods such as the Czochralski (CZ) process or the Float Zone (FZ) technique.
A major function of graphite crucibles is to withstand and support extremely high temperatures, typically above 2000°C, where third-generation semiconductor materials such as silicon carbide and gallium nitride are frequently synthesized. Crucibles made from high-purity graphite exhibit excellent resistance to high temperatures maintaining their physical and chemical states at such extreme levels without any form of decomposition or even metamorphosis. Good thermal conduction by graphite cruces means that they will not only conduct heat uniformly but also set up a stable temperature field. This comes into play crucially during the melting and crystallization processes since uniform temperature distribution will permit growth material under more or less equivalent conditions, thus reducing crystal defects and allowing quality semiconductor crystals.
In silicon carbide or gallium nitride crystal growth processes (such as vapor phase epitaxy CVD or physical vapor transport PVT), graphite crucibles are used to hold raw materials and provide a controlled growth environment. The chemical inertness of the crucible ensures that it does not chemically react with the semiconductor material at high temperatures, thereby maintaining the high purity of the material. At the same time, the good thermal conductivity of the graphite crucible helps to form a uniform temperature gradient, providing ideal conditions for crystal growth and reducing impurities and structural defects.
The chemical inertness of graphite crucibles is a key feature in the purification of semiconductor materials. Its high-purity graphite material can isolate external pollution and prevent impurities from entering the molten semiconductor material. The surface of the graphite crucible can also be coated (such as silicon carbide coating) to enhance its oxidation resistance and corrosion resistance, further ensuring high purity and high stability of the production process.