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TaC coated seed crystal holder

TaC coated seed crystal holder

TaC coated seed crystal holder is a high-performance component specifically designed for the growth environment of semiconductor materials. As a leading manufacturer of TTaC coated seed crystal holders, semicorex offers you efficient core component solutions in the high-end semiconductor manufacturing field.

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Product Description

The substrate of TaC coated seed crystal holder is usually made of graphite, silicon carbide or carbon/carbon composite materials, and then a layer of TaC coating is applied to its surface through advanced ultra-high temperature chemical vapor deposition (CVD) technology. The TaC coated seed crystal holder fabricated by this method has excellent corrosion resistance, super mechanical strength, good high-temperature resistance and efficient thermal conductivity.


The function of TaC coated seed crystal holder

1.Support function

Semicorex's TaC coated seed crystal holder provides a stable support platform for seed crystals, guaranteeing the seed crystal maintains a fixed position under challenging conditions such as high temperature and high vacuum. This effectively prevents issues like crystal displacement or damage from vibration and air flow, and thus ensures the continuity and stability of crystal growth.


2. Protective Effect

The TaC-coated seed crystal holder is installed above the graphite crucible lid, and isolates the graphite lid from high-temperature Si vapor. This effectively avoid vapor-induced corrosion and prolonging the graphite lid’s lifespan. Additionlly, the inherent chemical stability and thermal temperatures resistance of TaC coating also help to lessen the introduction of impurities, providing a stable and clean environment for the growth of seed crystals.


3. Temperature control

Semicorex TaC-coated seed crystal holder uses manufacturing techniques that are at the forefront of the industry. Precise temperature control of the thermal field can be achieved by expertly optimizing their shape, dimensions, and coating thickness. This considerably lowers the defect rate and efficiently promotes uniform crystal growth.


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