Semicorex silicon curved electrodes are the essential silicon components functioning as both upper electrodes and etch gas channels in the high-precision semiconductor etching processes. Semicorex silicon curved electrodes are the ideal solutions for optimizing the etching energy field, which are extensively applied in etching equipment for advanced packaging (TSV, WLCSP) and 3D-structured wafers.
During the advanced etch equipment, the silicon curved electrode is usually mounted on the top of the etching chamber, facing toward the semiconductor wafer. The silicon curved electrode typically operates in conjunction with the electrostatic chuck, Si focus ring, Si edge ring, Si exhaust ring, and Si shielding ring to provide a optimal operating conditions for high-precision etching.
With exceptional 3D electric field control capability, Semicorex silicon curved electrodes can perfectly match the geometric characteristics of complex structures. The special curved design enables precise plasma control and optimized energy distribution, which significantly affects the aspect ratio and sidewall verticality of 3D structure etching and fully meets the production line requirements of advanced packaging processes and 3D IC integration.
Semicorex silicon curved electrodes feature multiple uniformly distributed micro-holes on their surface for etch gas to enter the etching chamber. Semicorex silicon curved electrodes can achieve precise control on etch gas and allow it to be uniformly distributed in the etching chamber, thereby minimizing process variations caused by non-uniform gas distribution.
Semicorex silicon curved electrodes are made of ultra-high-purity single-crystal silicon with a purity level above 99.9999999%, offering superior resistance to plasma erosion. This high-standard material selection can effectively avoid unwanted contamination resulting from etching by-products while also significantly extending the service life of silicon curved electrodes.
Manufactured from MCZ-grown single-crystal silicon, Semicorex silicon curved electrodes exhibit superb resistivity uniformity: <5%, and a broad selectable resistivity range: low res. (<0.02), middle res. (1–4), and high res. (70–90).
Through high-precision mechanical processing, Semicorex silicon curved electrodes achieve consistent pore size and uniform hole distribution. Their surfaces are finely polished and ground: polished (Ra < 0.1 μm) and ground (Ra < 1.6 μm), with overall machining precision controlled within 0.03 mm.